KSC2073TU Fairchild Semiconductor, KSC2073TU Datasheet
KSC2073TU
Manufacturer Part Number
KSC2073TU
Description
TRANSISTOR NPN 150V 1.5A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSC2073H2TSTU.pdf
(4 pages)
Specifications of KSC2073TU
Transistor Type
NPN
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 500mA, 10V
Power - Max
25W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
150 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1.5 A
Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
1.5 A
Dc Collector/base Gain Hfe Min
40
Maximum Operating Frequency
4 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KSC2073TU
Manufacturer:
FAIRCHILD
Quantity:
5 288
Company:
Part Number:
KSC2073TU
Manufacturer:
Fairchi/ON
Quantity:
40 000
Part Number:
KSC2073TU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2000 Fairchild Semiconductor International
TV Vertical Deflection Output
• Complement to KSA940
• Collector-Base Voltage : V
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
T
BV
BV
BV
I
h
V
f
C
C
CBO
T
FE
J
STG
CBO
CEO
EBO
C
CE
ob
Symbol
Symbol
CBO
CEO
EBO
(sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
CBO
Parameter
= 150V
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
KSC2073
I
I
I
V
V
I
V
V
f = 1MHz
C
C
E
C
CB
CE
CE
CB
= 500 A, I
= 10mA, I
= - 500 A, I
= 500mA, I
Test Condition
= 120V, I
= 10V, I
= 10V, I
=10V, I
E
B
C
C
E
= 0
E
B
= 0
= 0.5A
= 0.5A
C
= 0
= 0
= 50mA
= 0
1.Base
1
Min.
150
150
40
5
- 55 ~ 150
Value
2.Collector
150
150
150
1.5
25
5
Typ.
75
50
TO-220
4
Max.
140
3.Emitter
10
1
Rev. A, February 2000
Units
W
Units
V
V
V
A
MHz
C
C
pF
V
V
V
V
A
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KSC2073TU Summary of contents
Page 1
... Emitter-Base Breakdown Voltage EBO I Collector Cut-off Current CBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Output Capacitance ob ©2000 Fairchild Semiconductor International KSC2073 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 500 ...
Page 2
... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 DC Thermal limitation S/B limitation 1 S/B limitation 0 [V], COLLECTOR EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 1000 I =6mA B I =5mA 100 B I =4mA B I =3mA B I =2mA B ...
Page 3
... Package Demensions 1.27 2.54TYP [2.54 ©2000 Fairchild Semiconductor International TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...