MJE3055TTU Fairchild Semiconductor, MJE3055TTU Datasheet
MJE3055TTU
Manufacturer Part Number
MJE3055TTU
Description
TRANSISTOR NPN 60V 10A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet
1.MJE3055TTU.pdf
(4 pages)
Specifications of MJE3055TTU
Transistor Type
NPN
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
8V @ 3.3A, 10A
Current - Collector Cutoff (max)
700µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 4A, 4V
Power - Max
600mW
Frequency - Transition
2MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
10 A
Maximum Dc Collector Current
10 A
Power Dissipation
75 W
Maximum Operating Frequency
2 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
20
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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©2001 Fairchild Semiconductor Corporation
General Purpose and Switching Applications
• DC Current Gain Specified to I
• High Current Gain-Bandwidth Product : f
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse test: PW 300 s, duty cycle 2% Pulse
I
P
V
V
V
I
P
T
T
BV
I
I
I
I
h
V
V
f
B
C
CEO
CEX1
CEX2
EBO
T
FE
C
J
STG
CBO
CEO
EBO
C
CE
BE
Symbol
Symbol
CEO
(sat)
(on)
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter On Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Collector -Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
=10A
a
C
T
=25 C)
=25 C)
C
T
=25 C unless otherwise noted
= 2MHz (Min.)
Parameter
T
C
=25 C unless otherwise noted
MJE3055T
I
V
@ T
V
V
V
I
I
V
V
V
V
C
C
C
CE
CE
CE
EB
CE
CE
CE
CE
= 200mA, I
= 4A, I
= 10A, I
C
= 5V, I
= 30V, I
= 70V, V
= 70V, V
= 4V, I
= 4V, I
= 4V, I
= 10V, I
= 150 C
Test Condition
B
B
C
= 0.4A
C
C
C
= 3.3A
B
C
= 0
= 4A
= 10A
= 4A
BE
BE
B
= 0
= 500mA
= 0
(off) = -1.5V
(off) = -1.5V
1.Base
1
- 55 ~ 150
2.Collector
Value
150
0.6
70
60
10
75
6
5
Min.
60
20
TO-220
2
5
Max.
3.Emitter
700
100
1.1
1.8
1
5
5
8
Rev. A1, February 2001
Units
W
W
V
V
V
A
A
Units
C
C
MHz
mA
mA
mA
V
V
V
V
A
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MJE3055TTU Summary of contents
Page 1
... EBO h *DC Current Gain FE V (sat) *Collector-Emitter Saturation Voltage CE V (on) *Base-Emitter On Voltage BE f Current Gain Bandwidth Product T * Pulse test: PW 300 s, duty cycle 2% Pulse ©2001 Fairchild Semiconductor Corporation MJE3055T = 2MHz (Min =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition ...
Page 2
... Typical Characteristics 1000 100 10 1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 1. DC current Gain 100 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 3. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0.1 0.01 0 Figure 2. Base-Emitter Saturation Voltage 105 100 I = 10I (sat (sat 100 I [A], COLLECTOR CURRENT ...
Page 3
... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, February 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...