MJD31CTF_SBDD001A Fairchild Semiconductor, MJD31CTF_SBDD001A Datasheet
MJD31CTF_SBDD001A
Manufacturer Part Number
MJD31CTF_SBDD001A
Description
TRANS NPN 100V 3A DPAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.MJD31CTF_NBDD001.pdf
(5 pages)
Specifications of MJD31CTF_SBDD001A
Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
1.56W
Frequency - Transition
3MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
MJD31/31C Rev. A3
© 2010 Fairchild Semiconductor Corporation
MJD31/31C
NPN Epitaxial Silicon Transistor
Features
• General Purpose Amplifier
• Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW≤300μs, Duty Cycle≤2%
Symbol
V
Symbol
V
V
CEO
V
V
V
T
CE
BE
I
I
I
I
h
P
CEO
CES
EBO
CBO
CEO
EBO
T
STG
I
CP
I
f
C
B
FE
C
(sat)
T
J
(on)
(sus)
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Parameter
T
a
=25°C unless otherwise noted
: MJD31
: MJD31C
: MJD31
: MJD31C
: MJD31
: MJD31C
a
T
C
=25°C)
=25°C)
a
Parameter
=25°C unless otherwise noted
1
I
I
V
V
V
V
V
V
V
I
V
V
C
C
C
CE
CE
CE
CE
BE
CE
CE
CE
CE
= 30mA, I
= 30mA, I
= 3A, I
= 40V, I
= 60V, I
= 5V, I
= 4V, I
= 4V, I
= 4A, I
= 10V, I
= 40V, V
= 100V, V
Test Condition
: MJD31C
: MJD31C
: MJD31
: MJD31
1
B
= 375mA
C
C
C
C
B
B
B
B
C
= 0
= 1A
= 3A
= 3A
BE
= 0
= 0
= 0
= 0
= 500mA
BE
1.Base
= 0
= 0
D-PAK
2.Collector
- 65 to 150
Value
1.56
100
100
150
15
1
40
40
5
3
5
1
Min.
100
40
25
10
3
3.Emitter
Max.
November 2010
1.2
1.8
50
50
20
20
50
www.fairchildsemi.com
1
I-PAK
Units
°C
°C
W
W
Units
V
V
V
V
V
A
A
A
MHz
mA
μA
μA
μA
μA
V
V
V
V
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MJD31CTF_SBDD001A Summary of contents
Page 1
... FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter On Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW≤300μs, Duty Cycle≤2% © 2010 Fairchild Semiconductor Corporation MJD31/31C Rev =25°C unless otherwise noted a Parameter : MJD31C : MJD31C =25°C) C =25° =25°C unless otherwise noted ...
Page 2
... Figure 1. DC current Gain 1000 100 [V], COLLECTOR BASE VOLTAGE CB Figure 3. Collector Capacitance =30V (off)=10V F CC 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Turn Off Time © 2010 Fairchild Semiconductor Corporation MJD31/31C Rev 0.1 0. Figure 2. Base-Emitter Saturation Voltage 0.1 10 100 10 STG 1 0.1 0. ...
Page 3
... Typical Performance Characteristics C], CASE TEMPERATURE C Figure 7. Power Derating © 2010 Fairchild Semiconductor Corporation MJD31/31C Rev. A3 (Continued) 100 125 150 175 3 www.fairchildsemi.com ...
Page 4
... Physical Dimensions © 2010 Fairchild Semiconductor Corporation MJD31/31C Rev. A3 D-PAK 4 Dimensions in Millimeters www.fairchildsemi.com ...
Page 5
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...