BC517 Fairchild Semiconductor, BC517 Datasheet

TRANS NPN DARL 30V 1.2A TO-92

BC517

Manufacturer Part Number
BC517
Description
TRANS NPN DARL 30V 1.2A TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BC517

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
30000 @ 20mA, 2V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
1.2 A
Maximum Collector Cut-off Current
0.1 uA
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
1.2 A
Dc Collector/base Gain Hfe Min
30000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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©2005 Fairchild Semiconductor Corporation
BC517 Rev. A
BC517
NPN Darlington Transistor
• This device is designed for applications requiring extremely high current gain at currents to 1.0A.
• Sourced from process 05.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
I
On Characteristics *
h
V
V
P
R
R
C
CBO
J
FE
CEO
CBO
EBO
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(on)
D
Symbol
Symbol
, T
JC
JA
STG
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Parameter
Parameter
T
a
- Continuous
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
T
a
1. Collector 2. Base 3. Emitter
= 25°C unless otherwise noted
1
I
I
I
V
V
I
I
C
C
E
C
C
CB
CE
= 2.0mA, I
= 10 A, I
= 100nA, I
= 100mA, I
= 10mA, V
= 30V, I
= 2.0V, I
1
TO-92
Conditions
E
E
B
C
C
CE
= 0
B
= 0
= 0
= 0
= 20mA
= 0.1mA
= 5.0V
-55 ~ 150
Value
Value
83.3
625
200
1.2
5.0
30
40
10
30,000
Min.
30
40
10
Max
100
1.4
1
January 2005
Units
Units
mW/ C
www.fairchildsemi.com
mW
C/W
C/W
V
V
V
A
C
Units
nA
V
V
V
V
V

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BC517 Summary of contents

Page 1

... BE(on) Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2005 Fairchild Semiconductor Corporation BC517 Rev. A TO- Collector 2. Base 3. Emitter T = 25°C unless otherwise noted a Parameter - Continuous T = 25°C unless otherwise noted a Conditions ...

Page 2

... Mechanical Dimensions 0.46 0.10 1.27TYP [1.27 0.20 BC517 Rev. A TO-92 +0.25 4.58 –0.15 1.27TYP ] [1.27 ] 0.20 3.60 0.20 (R2.29) 2 +0.10 0.38 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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