FJP13007H1TU Fairchild Semiconductor, FJP13007H1TU Datasheet
FJP13007H1TU
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FJP13007H1TU Summary of contents
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... EBO I Collector Current (DC Collector Current (Pulse Base Current B P Collector Dissipation ( Junction Temperature J T Storage Temperature STG © 2008 Fairchild Semiconductor Corporation FJP13007 Rev. A TO-220 1 1.Base 2.Collector 3.Emitter T = 25°C unless otherwise noted C Parameter = 25° July 2008 Value Units 700 V 400 ...
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... Current Gain Bandwidth Product T C Output Capacitance ob t Turn On Time ON t Storge Time STG t Fall Time F * Pulse Test: PW ≤ 300μs, Duty Cycle ≤ Classification FE Classification h FE1 © 2008 Fairchild Semiconductor Corporation FJP13007 Rev 25°C unless otherwise noted C Conditions I = 10mA 9V 5V ...
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... Figure 3. Collector Output Capacitance 1000 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Turn Off Time 10000 1000 100 10 0 [A], COLLECTOR CURRENT C © 2008 Fairchild Semiconductor Corporation FJP13007 Rev 0.1 0.01 10 1000 100 10 100 1000 0.1 Figure 6. Forward Biased Safe Operating Area 100 V =125V CC ...
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... Typical Characteristics Figure 7. Reverse Biased Safe Operating Area 100 10 1 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE © 2008 Fairchild Semiconductor Corporation FJP13007 Rev. A (Continued) 100 Vcc=50V =1A - 1mH 1000 10000 0 4 Figure 8. Power Derating 100 125 150 175 C], CASE TEMPERATURE C www.fairchildsemi.com ...
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... Mechanical Dimensions © 2008 Fairchild Semiconductor Corporation FJP13007 Rev. A TO220 5 www.fairchildsemi.com ...
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... Fairchild Semiconductor Corporation FJP13007 Rev. A www.fairchildsemi.com 6 ...