KSC3953DSTU Fairchild Semiconductor, KSC3953DSTU Datasheet

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KSC3953DSTU

Manufacturer Part Number
KSC3953DSTU
Description
TRANSISTOR NPN 120V 200MA TO-126
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSC3953DSTU

Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
1V @ 3mA, 30mA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 10V
Power - Max
1.3W
Frequency - Transition
400MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2000 Fairchild Semiconductor International
CRT Display Video Output
• High Current Gain Bandwidth Product : f
• High Collector-Emitter Voltage : V
• Low Reverse Transfer Capacitance : C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
I
I
P
BV
I
I
C
V
V
P
T
T
BV
BV
h
h
V
V
f
C
FE
C
CP
CBO
EBO
T
FE1
FE2
EBO
C
J
STG
CBO
CEO
C
CE
BE
re
Symbol
ob
Symbol
EBO
CBO
EBO
(sat)
(sat)
Classificntion
Classification
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
h
FE1
Parameter
CEO
=120V
a
C
re
T
=25 C)
=25 C)
T
C
=1.7pF(Typ.)
=400MHz(Typ.)
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
KSC3953
40 ~ 80
I
I
I
V
V
V
I
I
V
V
V
V
C
C
E
C
C
CB
EB
CE
CE
CE
CB
CB
C
= 10 A, I
= 1mA, R
= 100 A, I
= 30mA, I
= 30mA, I
= 2V, I
= 80V, I
= 10V, I
= 10V, I
= 10V,I
= 30V, f = 1MHz
= 30V, f = 1MHz
Test Condition
C
B
C
BE
E
C
C
B
B
= 0
C
= 0
= 50mA
= 0
= 3mA
= 3mA
= 10mA
= 100mA
= 0
=
1
1. Emitter
Min.
120
120
40
20
3
- 55 ~ 150
Value
120
120
200
400
150
1.3
2.Collector
60 ~ 120
3
8
Typ.
400
2.1
1.7
D
TO-126
Max.
120
0.1
1.0
1.0
1.0
3.Base
Rev. A, February 2000
Units
mA
mA
W
W
Units
V
V
V
MHz
C
C
pF
pF
V
V
V
V
V
A
A

Related parts for KSC3953DSTU

KSC3953DSTU Summary of contents

Page 1

... CE V (sat) Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob C Reverse Transfer Capacitance re h Classificntion FE Classification h FE1 ©2000 Fairchild Semiconductor International KSC3953 =400MHz(Typ.) T =120V CEO =1.7pF(Typ =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition ...

Page 2

... I = 0.9mA [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 10 1 0.1 0. [mA], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 100 10 1 0.1 0 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2000 Fairchild Semiconductor International 1000 I = 0.8mA 0.7mA 0.6mA 100 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA 120 ...

Page 3

... Typical Characteristics 1000 100 [mA], COLLECTOR CURRENT C Figure 7. Current Gain Bandwidth Product 100 o T[ C], TEMPERATURE Figure 9. Power Derating ©2000 Fairchild Semiconductor International (Continued) 1000 V = 10V I MAX. (Pulse MAX. (DC) C 100 10 1 100 1 V Figure 8. Safe Operating Area 125 150 175 100 1000 ...

Page 4

... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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