KSC3233DTF Fairchild Semiconductor, KSC3233DTF Datasheet
KSC3233DTF
Manufacturer Part Number
KSC3233DTF
Description
TRANSISTOR NPN 400V 2A I-PAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSC3233DTF.pdf
(4 pages)
Specifications of KSC3233DTF
Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
1V @ 200mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 1A, 5V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
©2001 Fairchild Semiconductor Corporation
High Speed Switching
• Low Collector-Emitter Saturation Voltage
• High speed Switching : t
• Collector-Emitter Voltage : V
• Lead formed for Surface Mount Applications (D-PAK, “ -D “ Suffix)
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
I
I
BV
t
t
V
V
V
P
P
T
T
BV
I
I
h
h
V
V
t
C
B
STG
F
CBO
EBO
ON
FE1
FE2
J
STG
CBO
CEO
EBO
C
C
CE
BE
Symbol
Symbol
CEO
CEO
(sat)
(sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
F
=1 s (Max.) @ I
CEO
=400V
Parameter
a
C
T
=25 C)
=25 C)
C
C
=25 C unless otherwise noted
Parameter
=0.8A
T
C
=25 C unless otherwise noted
KSC3233
I
I
V
V
V
V
I
I
V
1
R
C
C
C
C
B1
CB
EB
CE
CE
CC
L
= 1mA, I
= 10mA, I
= 1A, I
= 1A, I
= 250
= -I
= 7V, I
= 400V, I
= 5V, I
= 5V, I
= 200V, I
Test Condition
B2
B
B
C
= 0.2A
= 0.2A
= 0.08A
E
C
C
B
= 0
= 0
= 0.1A
= 1A
1
E
C
= 0
1. Base 2. Collector 3. Emitter
= 0.8A
= 0
- 55 ~ 150
Value
500
400
150
0.5
20
7
2
1
Min.
500
400
20
8
I-PAK
Max.
100
1.5
2.5
1
1
1
1
Rev. A1, June 2001
Units
W
W
Units
V
V
V
A
A
C
C
mA
V
V
V
V
A
s
s
s
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KSC3233DTF Summary of contents
Page 1
... DC Current Gain FE1 h FE2 V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE t Turn ON Time ON t Storage Time STG t Fall Time F ©2001 Fairchild Semiconductor Corporation KSC3233 =0. =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Parameter Test Condition I = 1mA 10mA, I ...
Page 2
... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 I MAX. (Pulse) C 100ms I MAX. (DC 0.1 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 100 0 2.0 1.6 1.2 0.8 0.4 0.0 0 Figure 4. Base-Emitter on Voltage ...
Page 3
... Package Demensions (0.50) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation I-PAK 6.60 0.20 5.34 0.20 (4.34) (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Dimensions in Millimeters Rev. A1, June 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...