KSD401FYTU Fairchild Semiconductor, KSD401FYTU Datasheet - Page 2

• Manufacturer Part Number: KSD401FYTU
• Description: TRANSISTOR NPN 150V 2A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of KSD401FYTU

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 400mA, 10V
• Power - Max: 25W
• Frequency - Transition: 5MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 3. Base-Emitter Saturation Voltage
0.01
0.1
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
10
1
1
0.01
0
Thermal limitation
1. Tc=25℃
2. *single pulse
Figure 1. Static Characteristic
Figure 5. Safe Operating Area
5
V
Collector-Emitter Saturation Voltage
CE
V
[V], COLLECTOR-EMITTER VOLTAGE
10
10
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
V
[A], COLLECTOR CURRENT
V
15
CE
BE
(sat)
(sat)
0.1
20
S/B limitation
I
B
= 8mA
I
25
B
*1ms
= 7mA
I
B
= 6mA
30
I
1
100
B
35
I
S/B limitation
= 5mA
B
= 4mA
I
B
I
= 3mA
B
40
I
C
= 2mA
= 10 I
I
B
= 1mA
45
B
50
10
1000
1000
100
100
10
10
Figure 4. Collector Output Capacitance
40
35
30
25
20
15
10
0.01
5
0
1
0
Figure 2. DC current Gain
25
Figure 6. Power Derating
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
T
50
C
[
o
0.1
C], CASE TEMPERATURE
75
10
100
1
125
V
CE
= 10V
150
Rev. B, February 2004
100
10
175