KSD1588RTU Fairchild Semiconductor, KSD1588RTU Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single KSD1588RTU
Manufacturer Part Number
KSD1588RTU
Description
TRANSISTOR NPN 60V 7A TO-220F
Manufacturer
Fairchild Semiconductor
Specifications of KSD1588RTU
Transistor Type
NPN
Current - Collector (ic) (max)
7A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 500mA, 5A
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 3A, 1V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2000 Fairchild Semiconductor International
Low Frequency Power Amplifier
• Low Speed Switching
• Complement to KSB1097
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 300 s, Duty Cycle 10%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2%
h
I
I
I
P
P
I
h
h
V
V
V
T
T
I
V
V
FE1
C
CP
B
EBO
CBO
FE2
C
C
J
STG
CBO
CEO
EBO
CE
BE
Symbol
FE1
Symbol
(sat)
(sat)
Classification
Classification
h
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Parameter
a
C
T
=25 C)
=25 C)
C
=25 C unless otherwise noted
Parameter
T
40 ~ 80
C
=25 C unless otherwise noted
R
KSD1588
V
V
V
V
I
I
C
C
CB
EB
CE
CE
= 5A, I
= 5A, I
= 5V, I
= 80V, I
= 1V, I
= 1V, I
Test Condition
80 ~ 120
B
B
O
= 0.5A
= 0.5A
C
C
C
E
= 0
= 3A
= 5A
= 0
1
1.Base
-55 ~ 150
2.Collector
Value
100
150
3.5
60
15
30
7
2
7
TO-220F
Min.
40
20
100 ~ 200
Max.
3.Emitter
Y
200
0.5
1.5
10
10
Rev. A, February 2000
Units
W
W
V
V
V
A
A
A
Units
C
C
V
V
A
A
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KSD1588RTU Summary of contents
... Current Gain FE1 h FE2 V (sat) *Collector-Emitter Saturation Voltage CE V (sat) *Base-Emitter Saturation Voltage BE * Pulse Test: PW 350 s, Duty Cycle 2% h Classification FE1 Classification h FE1 ©2000 Fairchild Semiconductor International KSD1588 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Parameter Test Condition V = 80V ...
... CE 0.01 0.001 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 160 140 120 100 100 C], CASE TEMPERATURE C Figure 5. Derating Curve Safe Operating Area ©2000 Fairchild Semiconductor International 1000 100 I = 6mA 4mA 2mA 0.001 100 0.1 0.01 1 ...
... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2000 Fairchild Semiconductor International TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, February 2000 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...
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