BC369_J35Z Fairchild Semiconductor, BC369_J35Z Datasheet

BC369_J35Z

Manufacturer Part Number

BC369_J35Z

Description

TRANS NPN GP 20V 1.5A TO-92

Manufacturer

Fairchild Semiconductor

Datasheet

1.BC369.pdf (4 pages)

Specifications of BC369_J35Z

Transistor Type

PNP

Current - Collector (ic) (max)

1.5A

Voltage - Collector Emitter Breakdown (max)

20V

Vce Saturation (max) @ Ib, Ic

500mV @ 100mA, 1A

Dc Current Gain (hfe) (min) @ Ic, Vce

85 @ 500mA, 1V

Power - Max

625mW

Frequency - Transition

45MHz

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

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1997 Fairchild Semiconductor Corporation

Symbol

CEO

CES

EBO

This device is designed for general purpose medium power

amplifiers and switches requiring collector currents to 1.2 A.

Sourced from Process 77.

PNP General Purpose Amplifier

Absolute Maximum Ratings*

, T

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

stg

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Derate above 25 C

BC369

Characteristic

TO-92

Parameter

TA = 25°C unless otherwise noted

BC369

Max

83.3

625

200

5.0

-55 to +150

Value

5.0

1.5

Units

mW/ C

Units

C/W

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BC369_J35Z Summary of contents

Page 1

... All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient JA 1997 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 5.0 V 1.5 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CES V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO I Emitter-Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V ...

Page 3

Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current = °C 25 °C 0.6 125 °C 0 100 I - COLLECTOR CURRENT ( mA) C Collector-Cutoff Current vs Ambient Temperature 100 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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