KSH112GTM_NB82051 Fairchild Semiconductor, KSH112GTM_NB82051 Datasheet - Page 4

• Manufacturer Part Number: KSH112GTM_NB82051
• Description: TRANS DARL NPN 100V 2A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of KSH112GTM_NB82051

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 20µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 2A, 3V
• Power - Max: 1.75W
• Frequency - Transition: 25MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Base-emitter Saturation Voltage (max): 4V
• Collector-emitter Saturation Voltage: 2V
• Collector Current (dc) (max): 2A
• Dc Current Gain: 200
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Package Dimensions
MAX0.96
[2.30 0.20]
2.30TYP
(0.50)
6.60
5.34
(4.34)
0.20
0.30
[2.30 0.20]
2.30TYP
0.76
(0.50)
D-PAK
0.10
(2XR0.25)
6.60
(5.34)
(5.04)
(1.50)
0.20
0.76
2.30
1.02
2.30
0.50
0.50
0.10
Dimensions in Millimeters
0.10
0.10
0.20
0.20
0.10
Rev. A4, October 2002