PN2222A_J61Z Fairchild Semiconductor, PN2222A_J61Z Datasheet

TRANS GP NPN 40V 1A TO-92

PN2222A_J61Z

Manufacturer Part Number
PN2222A_J61Z
Description
TRANS GP NPN 40V 1A TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of PN2222A_J61Z

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
PN2222A / MMBT2222A / PZT2222A Rev. A3
© 2010 Fairchild Semiconductor Corporation
PN2222A / MMBT2222A / PZT2222A
NPN General Purpose Amplifier
Features
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
• Sourced from process 19.
Absolute Maximum Ratings *
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle
Thermal Characteristics
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm
operations.
Symbol
Symbol
V
V
V
T
R
R
P
CEO
CBO
EBO
STG
I
θJC
θJA
C
D
E B C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN2222A
TO-92
Parameter
T
a
= 25°C unless otherwise noted
Parameter
T
a
= 25°C unless otherwise noted
SOT-23
Mark:1P
MMBT2222A
C
1
PN2222A
B
83.3
625
200
5.0
E
*MMBT2222A
Max.
350
357
- 55 ~ 150
2.8
Value
6.0
1.0
40
75
SOT-223
C
PZT2222A
**PZT2222A
1,000
125
8.0
B
C
2
www.fairchildsemi.com
.
Units
August 2010
°C
E
V
V
V
A
mW/°C
Units
°C/W
°C/W
mW

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PN2222A_J61Z Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”. ** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm © 2010 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / PZT2222A Rev. A3 MMBT2222A C ...

Page 2

... Switching Characteristics t Delay Time d t Rise Time r t Storage Time s t Fall Time f * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% © 2010 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / PZT2222A Rev 25°C unless otherwise noted a Test Condition = 10mA 10μ ...

Page 3

... Collector Current Collector-Cutoff Current vs Ambient Temperature 500 V = 40V 100 0 AMBIENT TEMPERATURE ( C) A Figure 5. Collector Cutoff Current vs Ambient Temperature © 2010 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / PZT2222A Rev 0.3 0.2 0 100 300 Figure 2. Collector-Emitter Saturation Voltage 0.8 0.6 °C 0.4 0.2 ...

Page 4

... Figure 9. Power Dissipation vs Ambient Temperature Common Emitter Characteristics 2 1.6 1.2 0.8 0 AMBIENT TEMPERATURE ( C) A Figure 11. Common Emitter Characteristics © 2010 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / PZT2222A Rev. A3 (Continued) 400 320 240 160 t off 1000 Figure 8. Switching Times vs Collector Current Common Emitter Characteristics ...

Page 5

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...

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