PN2369_D27Z Fairchild Semiconductor, PN2369_D27Z Datasheet
PN2369_D27Z
Manufacturer Part Number
PN2369_D27Z
Description
TRANS GP NPN 15V 200MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.PN2369.pdf
(4 pages)
Specifications of PN2369_D27Z
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 1V
Power - Max
350mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
©2004 Fairchild Semiconductor Corporation
NPN Switching Transistor
• This device is designed for high speed saturated switching at collector
• Sourced from process 21.
Absolute Maximum Ratings*
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
V
V
V
I
T
Off Characteristics
V
V
V
V
I
On Characteristics
h
V
V
Small Signal Characteristics
C
C
h
Switching Characteristics
t
t
t
C
CBO
s
on
off
Symbol
currents of 10mA to 100mA.
FE
fe
J
CEO
CBO
EBO
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
obo
ibo
, T
Symbol
STG
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Small -Signal Current Gain
Storage Time
Turn-On Time
Turn-Off Time
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
T
a
=25 C unless otherwise noted
Parameter
T
- Continuous
a
=25 C unless otherwise noted
PN2369
I
I
I
I
V
V
I
I
I
I
V
V
I
f = 100MHz
I
V
V
I
C
C
C
E
C
C
C
C
C
B1
B2
CB
CB
CB
EB
CC
CC
= 10 A, I
= 10mA, I
= 10 A, V
= 10 A, I
= 10mA, V
= 100mA, V
= 10mA, I
= 10mA, I
= 10mA, V
= I
= 1.5mA
= 0.5V, I
= 20V, I
= 20V, I
= 5.0V, I
= 3.0V, I
= 3.0V, I
B2
= I
Test Condition
C
C
E
B
E
E
B
B
BE
C
C
E
CE
CE
C
= 10mA
= 0
= 0
= 0
= 0
= 0, T
= 1.0mA
= 1.0mA
CE
= 10mA, I
= 0, f = 1.0MHz
= 0, f = 1.0MHz
= 10mA, I
= 0
= 1.0V
= 10V, R
= 2.0V
a
= 125 C
B1
B1
G
= 3.0mA,
= 2.0k ,
= 3.0mA
1. Emitter 2. Base 3. Collector
1
-55 ~ 150
Ratings
200
4.5
15
40
Min.
4.5
0.7
5.0
15
40
40
40
20
TO-92
Max.
0.25
0.85
120
0.4
4.0
5.0
30
13
12
18
Rev. A, January 2004
Units
mA
V
V
V
C
Units
pF
pF
ns
ns
ns
V
V
V
V
V
V
A
A
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PN2369_D27Z Summary of contents
Page 1
... Small -Signal Current Gain fe Switching Characteristics t Storage Time s t Turn-On Time on t Turn-Off Time off * Pulse Test: Pulse Width 300 s, Duty Cycle ©2004 Fairchild Semiconductor Corporation PN2369 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = 10mA ...
Page 2
... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation T =25 C unless otherwise noted a Parameter Max. Units 350 mW 2.8 mW/ C 125 C/W 357 C/W Rev. A, January 2004 ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, January 2004 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...