PN3567_D27Z Fairchild Semiconductor, PN3567_D27Z Datasheet
PN3567_D27Z
Manufacturer Part Number
PN3567_D27Z
Description
TRANS GP NPN 40V 600MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.PN3567.pdf
(4 pages)
Specifications of PN3567_D27Z
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
250mV @ 15mA, 150mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 1V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is for use as a medium amplifier and switch requiring
• Sourced from process 19.
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics
h
V
V
Small Signal Characteristics
C
C
C
Symbol
CBO
EBO
collector currents up 300mA.
FE
J,
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
obo
ibo
T
Symbol
(sat)
(on)
STG
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage *
Base-Emitter On Voltage
Output Capacitance
Input Capacitance
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300ms, Duty Cycle
Parameter
2.0%
T
A
=25 C unless otherwise noted
T
Parameter
A
- Continuous
=25 C unless otherwise noted
PN3567
I
I
I
V
V
V
V
V
I
V
V
V
C
C
E
C
CB
CB
EB
CE
CE
CE
CB
EB
= 100 A, I
= 10 A, I
= 150mA, I
= 30mA, I
= 40V, I
= 40V, I
= 4V, I
= 1V, I
= 1V, I
= 1V, I
= 10V, I
= 0.5V, I
Test Condition
C
C
C
C
C
B
E
E
E
E
= 0
C
= 150mA
= 30mA
= 150mA
B
= 0
= 0
= 0
= 0, T
= 0
= 0
= 0
= 15mA
A
= 75 C
1. Emitter 2. Base 3. Collector
1
Min.
- 55 ~ 150
40
80
40
40
5
Value
600
40
80
5
Typ.
TO-92
Max.
0.25
120
1.1
Rev. A1, November 2002
50
20
80
25
5
Units
mA
V
V
V
C
Units
nA
nA
pF
V
V
V
V
V
A
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PN3567_D27Z Summary of contents
Page 1
... Collector-Emitter Saturation Voltage * CE V (on) Base-Emitter On Voltage BE Small Signal Characteristics C Output Capacitance obo C Input Capacitance ibo * Pulse Test: Pulse Width 300ms, Duty Cycle ©2002 Fairchild Semiconductor Corporation PN3567 T =25 C unless otherwise noted A Parameter - Continuous T =25 C unless otherwise noted A Test Condition I = 30mA ...
Page 2
... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA R Thermal Resistance, Junction to Case JC ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted A Parameter Max. Units 625 mW 5 mW/ C 83.3 C/W 200 C/W Rev. A1, November 2002 ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, November 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...