PN3569_D74Z Fairchild Semiconductor, PN3569_D74Z Datasheet
PN3569_D74Z
Manufacturer Part Number
PN3569_D74Z
Description
TRANS GP NPN 40V 500MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.PN3569.pdf
(3 pages)
Specifications of PN3569_D74Z
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
250mV @ 15mA, 150mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 1V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
©2003 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed for use at general purpose amplifiers and
Absolute Maximum Ratings*
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics
h
V
V
Small Signal Characteristics
h
P
R
R
C
CBO
EBO
switches requiring collecor currents to 300mA.
FE
fe
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
D
Symbol
, T
Symbol
JC
JA
Symbol
(sat)
(on)
STG
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal current Gain
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
Parameter
T
a
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
a
=25 C unless otherwise noted
- Continuous
PN3569
I
I
I
V
V
V
V
I
I
I
C
C
E
C
C
C
CB
EB
CE
CE
= 30 A, I
= 100 A, I
= 10 A, I
= 150mA, I
= 150mA, V
= 50mA, V
= 40V, I
= 4.0V, I
= 1V, I
= 1V, I
Test Condition
C
C
B
C
E
E
C
= 150mA
= 30mA
CE
= 0
= 0
B
= 0
CE
= 0
= 0
= 15mA
= 10V, f = 10MHz
= 1V
Max.
83.3
625
200
5.0
1. Emitter 2. Base 3. Collector
1
- 55 ~ 150
Value
500
5.0
40
80
Min.
100
100
5.0
3.0
40
80
TO-92
Max.
0.25
300
1.1
50
25
30
mW/ C
Units
mW
C/W
C/W
Rev. A, November 2003
Units
mA
V
V
V
Units
C
nA
nA
V
V
V
V
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PN3569_D74Z Summary of contents
Page 1
... Pulse Test: Pulse Width 300 s, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2003 Fairchild Semiconductor Corporation PN3569 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2003 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, November 2003 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...