PN3638A_D75Z Fairchild Semiconductor, PN3638A_D75Z Datasheet

TRANS GP PNP 25V 800MA TO-92

PN3638A_D75Z

Manufacturer Part Number
PN3638A_D75Z
Description
TRANS GP PNP 25V 800MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of PN3638A_D75Z

Transistor Type
PNP
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
1V @ 30mA, 300mA
Current - Collector Cutoff (max)
35nA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 300mA, 2V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings*
, T
*
JC
JA
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
Derate above 25 C
B E
PN3638
PN3638A
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
PN3638/A
Discrete POWER & Signal
Max
83.3
625
200
5.0
-55 to +150
Value
800
4.9
25
25
Technologies
Units
mW/ C
Units
mA
mW
C/W
C/W
V
V
V
C

Related parts for PN3638A_D75Z

PN3638A_D75Z Summary of contents

Page 1

... Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Case R JC Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Discrete POWER & Signal Technologies Value Units ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage* V Collector-Emitter Breakdown (BR)CES Voltage* V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CES ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation Voltage ...

Page 3

... PROELECTRON SERIES), 96 L34Z TO-92 STANDARD NO LEADCLIP STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 FSCINT Label ©2001 Fairchild Semiconductor Corporation TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles 5 Reels per Intermediate Box F63TNR Label Customized Label AMMO PACK OPTION See Fig 3 ...

Page 4

TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Style “A”, D26Z, D70Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE ...

Page 5

TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4 User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ELECT ROSTATIC SEN SITIVE D EVICES F63TNR Label ...

Page 6

... TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 January 2000, Rev. B ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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