PN3642_D26Z Fairchild Semiconductor, PN3642_D26Z Datasheet
PN3642_D26Z
Manufacturer Part Number
PN3642_D26Z
Description
TRANS GP NPN 45V 500MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.PN3642.pdf
(4 pages)
Specifications of PN3642_D26Z
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
220mV @ 15mA, 150mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 10V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
* Pulse Test: Pulse Width
V
V
V
I
T
Off Characteristics
V
V
V
I
On Characteristics
h
V
Small Signal Characteristics
C
h
G
C
Symbol
CES
switches requiring collector currents to 300mA.
FE
fe
J,
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
ob
pe
T
Symbol
(sat)
STG
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Small Signal Current Gain
Amplifier Power Gain
Collector Efficientcy
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300ms, Duty Cycle
Parameter
2.0%
T
A
=25 C unless otherwise noted
Parameter
T
- Continuous
A
=25 C unless otherwise noted
PN3642
I
I
I
V
V
V
V
I
V
I
V
f = 30MHz, R
V
f = 30MHz, R
C
C
E
C
C
CB
CB
CE
CE
CB
CE
CE
= 10mA, I
= 10 A, I
= 10 A, I
= 150mA, I
= 50mA, V
= 50V, I
= 50V, I
= 10V, I
= 10V, I
= 10V, f = 140KHz
= 15V, I
= 15V, I
Test Condition
E
C
B
E
E
C
C
C
C
CE
L
L
= 0
B
= 0
= 0
= 0
= 0, T
= 150mA
= 500mA
= 0, R
= 0, R
= 260
= 260
= 15mA
= 5.0V, f = 100MHz
A
G
G
= 65 C
= 140
= 140
1. Emitter 2. Base 3. Collector
1
- 55 ~ 150
Value
500
5.0
45
60
Min.
5.0
1.5
45
60
40
15
10
60
TO-92
Max.
0.22
120
1.0
8.0
50
Rev. B, November 2002
Units
mA
V
V
V
Units
C
nA
pF
dB
%
V
V
V
V
A
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PN3642_D26Z Summary of contents
Page 1
... Small Signal Characteristics C Output Capacitance ob h Small Signal Current Gain fe G Amplifier Power Gain pe Collector Efficientcy * Pulse Test: Pulse Width 300ms, Duty Cycle ©2002 Fairchild Semiconductor Corporation PN3642 T =25 C unless otherwise noted A Parameter - Continuous T =25 C unless otherwise noted A Test Condition I = 10mA, I ...
Page 2
... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted A Parameter Max. Units 625 mW 5.0 mW/ C 83.3 C/W 200 C/W Rev. B, November 2002 ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, November 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...