FJX3015RTF Fairchild Semiconductor, FJX3015RTF Datasheet
FJX3015RTF
Manufacturer Part Number
FJX3015RTF
Description
TRANSISTOR NPN 50V 100MA SOT-323
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJX3015RTF.pdf
(4 pages)
Specifications of FJX3015RTF
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
33 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=2.2K , R2=10K )
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
T
BV
BV
I
h
V
f
C
V
V
R
R
C
CBO
T
Symbol
FE
CBO
CEO
EBO
C
J
STG
CE
I
I
ob
1
1
(off)
(on)
/R
CBO
CEO
Symbol
(sat)
2
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
(Bias Resistor Built In)
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
FJX3015R
I
I
V
V
I
V
V
f=1.0MHz
V
V
C
C
C
CB
CE
CE
CB
CE
CE
=10 A, I
=100 A, I
=10mA, I
=40V, I
=5V, I
=10V, I
=10V, I
=5V, I
=0.3V, I
Test Condition
Marking
C
C
E
E
=10mA
B
C
E
=
=0
B
C
=0
=0.5mA
=5mA
=0
=0
=20mA
S 1 5
1. Base 2. Emitter 3. Collector
Min.
0.20
0.3
1.5
33
50
50
-55 ~ 150
Equivalent Circuit
B
3
Value
100
200
150
50
50
10
Typ.
0.22
250
3.7
2.2
R1
R2
1
Max.
0.25
0.1
0.3
2.9
3
SOT-323
Rev. A2, August 2002
2
Units
mW
mA
V
V
V
C
E
C
C
Units
MHz
K
pF
V
V
V
V
V
A
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FJX3015RTF Summary of contents
Page 1
... Current Gain Bandwidth Product T C Output Capacitance ob V (off) Input Off Voltage I V (on) Input On Voltage I R Input Resistor Resistor Ratio 1 2 ©2002 Fairchild Semiconductor Corporation FJX3015R (Bias Resistor Built In) Marking =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = =100 ...
Page 2
... Typical Characteristics 1000 100 [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 1 0.1 0.01 0.2 0.4 0.6 V (off)[V], INPUT OFF VOLTAGE I Figure 3. Input Off Voltage ©2002 Fairchild Semiconductor Corporation 2. 10K 2 1 0.1 100 1000 0.1 280 2.2K 1 240 R = 10K 2 200 160 120 80 40 ...
Page 3
... Package Dimensions 2.00±0.20 1.25±0.10 1.00±0.10 ©2002 Fairchild Semiconductor Corporation SOT-323 2.10±0.10 0.95±0.15 ±0.10 +0.05 0.05 –0.02 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min 3° 0.90 1.30±0.10 Dimensions in Millimeters Rev. A2, August 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...