FJX4004RTF Fairchild Semiconductor, FJX4004RTF Datasheet - Page 63

• Manufacturer Part Number: FJX4004RTF
• Description: TRANS PNP 50V 100MA SOT-323
• Manufacturer: Fairchild Semiconductor

Specifications of FJX4004RTF

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FJX4004RTF; FJX4004RTFTR

Hybrid Transistors
Products
SC70-6 NPN Configuration
FFB3904
FFB2222A
BC847S
FFB5551
SC70-6 NPN/PNP Configuration
FFB2227A
FFB3946
SC70-6 PNP Configuration
FFB3906
BC857S
FFB2907A
SOIC NPN Configuration
MMPQ2222
MMPQ3904
MMPQ2222A
FTM3725
SOIC NPN/PNP Configuration
MMPQ6700
SOIC PNP Configuration
MMPQ3906
MMPQ2907
MMPQ2907A
SOT-563F PNP Configuration
FJYF2906
SuperSOT-6 NPN Configuration
FMBA14
FMB3904
FMB2222A
FMB100
FMBA06
FMBSA06
FMB5551
FMBS5551
SuperSOT-6 NPN/PNP Configuration
FMB2227A
FMB3946
V
160
160
160
(V)
40
40
45
30
40
40
45
60
30
40
40
40
40
40
40
60
40
30
40
40
45
80
80
30
40
CEO
V
180
180
180
(V)
60
75
50
60
40
40
50
60
60
60
75
60
40
40
60
60
40
30
60
75
75
80
80
60
40
CBO
V
(V)
10
EBO
6
5
6
6
5
5
5
5
5
5
6
5
6
5
5
5
5
5
6
5
6
4
4
6
6
5
5
Max
0.15
00
0.
0.5
0.
0.5
0.
0.
0.
0.6
0.5
0.
0.5
1.
0.
0.
0.6
0.6
1.
0.
0.5
0.5
0.5
0.5
0.1
0.6
0.5
0.
(A)
I
C
0000
Min
100
100
110
100
100
100
15
100
100
100
100
100
100
100
100
100
100
100
80
75
75
60
70
75
80
80
80
Max
300
300
630
50
300
300
630
300
300
180
300
300
300
300
300
450
50
50
300
–
–
–
–
–
–
–
–
–
@ V
h
FE
3.00mm 3 1.70mm 3 1.10mm (Refer to p. 74 for detailed package drawing)
3.00mm 3 1.70mm 3 1.10mm (Refer to p. 74 for detailed package drawing)
10
10
10
10
10
10
10
10
10
.0mm 3 1.5mm 3 1.10mm (Refer to p. 70 for detailed package drawing)
.0mm 3 1.5mm 3 1.10mm (Refer to p. 70 for detailed package drawing)
.0mm 3 1.5mm 3 1.10mm (Refer to p. 70 for detailed package drawing)
CE
4.9mm 3 4.mm 3 3.0mm (Refer to p. 7 for detailed package drawing)
1
5
5
1
1
5
1
1
1
1
1
5
1
1
1
1
5
5
1
1.6mm 3 1.mm 3 0.59mm (Refer to p. 73 for detailed package drawing)
4.9mm 3 4.mm 3 3.0mm (Refer to p. 7 for detailed package drawing)
4.9mm 3 4.mm 3 3.0mm (Refer to p. 7 for detailed package drawing)
(V) @ I
C
150
150
150
150
100
150
150
100
150
100
150
10
10
10
10
10
10
10
10
10
10
10
10
10
10


1
(mA)
V
CE (sat)
0.65
0.5
0.65
0.6
0.5
0.5
0.5
0.15
0.15
0.5
0.3
1.4
0.4
1.6
0.4
0.3
0.4
1.6
1.6
0.3
1.5
0.3
0.4
1.4
1
1
1
1
Saturation Voltage
(V)
www.fairchildsemi.com
@ I
Small Signal
Transistors & Diodes
Selection Guide
C
500
100
300
100
500
150
500
100
300
500
100
500
00
100
100
300
50
50
10
50
50
10
50
10
50
10
10
10
(mA) @ I
B
0.1
50
30
50
15
50
10
30
50
50
0
10
10
30
5
5
5
1
5
5
5
1
5
1
5
1
1
1
(mA)
63