M25PX32-VMF6E NUMONYX, M25PX32-VMF6E Datasheet - Page 23

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M25PX32-VMF6E

Manufacturer Part Number
M25PX32-VMF6E
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M25PX32-VMF6E

Cell Type
NOR
Density
32Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
SOIC W
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
4M
Supply Current
12mA
Mounting
Surface Mount
Pin Count
16
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25PX32-VMF6E
Manufacturer:
ST
0
Part Number:
M25PX32-VMF6E
Manufacturer:
MICRON
Quantity:
20 000
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M25PX32-VMF6EB
Manufacturer:
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0
M25PX32
Instructions
6
Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial Data input(s) DQ0 (DQ1) is (are) sampled on the first rising edge of Serial Clock (C)
after Chip Select (S) is driven Low. Then, the one-byte instruction code must be shifted in to
the device, most significant bit first, on Serial Data input(s) DQ0 (DQ1), each bit being
latched on the rising edges of Serial Clock (C).
The instruction set is listed in
Table
5.
Every instruction sequence starts with a one-byte instruction code. Depending on the
instruction, this might be followed by address bytes, or by data bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at higher speed (FAST_READ),
Dual Output Fast Read (DOFR), Read OTP (ROTP), Read Lock Registers (RDLR), Read
Status Register (RDSR), Read Identification (RDID) or Release from Deep Power-down
(RDP) instruction, the shifted-in instruction sequence is followed by a data-out sequence.
Chip Select (S) can be driven High after any bit of the data-out sequence is being shifted
out.
In the case of a Page Program (PP), Program OTP (POTP), Dual Input Fast Program
(DIFP), Subsector Erase (SSE), Sector Erase (SE), Bulk Erase (BE), Write Status Register
(WRSR), Write to Lock Register (WRLR), Write Enable (WREN), Write Disable (WRDI) or
Deep Power-down (DP) instruction, Chip Select (S) must be driven High exactly at a byte
boundary, otherwise the instruction is rejected, and is not executed. That is, Chip Select (S)
must driven High when the number of clock pulses after Chip Select (S) being driven Low is
an exact multiple of eight.
All attempts to access the memory array during a Write Status Register cycle, Program
cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program
cycle or Erase cycle continues unaffected.
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