M25PX32-VMF6E NUMONYX, M25PX32-VMF6E Datasheet - Page 56

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M25PX32-VMF6E

Manufacturer Part Number
M25PX32-VMF6E
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M25PX32-VMF6E

Cell Type
NOR
Density
32Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
SOIC W
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
4M
Supply Current
12mA
Mounting
Surface Mount
Pin Count
16
Lead Free Status / RoHS Status
Compliant

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Table 18.
1. Typical values given for T
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.
6. V
7. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
8. int(A) corresponds to the upper integer part of A. For example, int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Figure 31. Serial input timing
Symbol
t
t
PP
(success or failure) is known. Avoid applying VPPH to the W/VPP pin during Bulk Erase.
obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤
256).
t
t
SSE
CH
t
SE
BE
PPH
S
C
DQ0
DQ1
W
(7)
+ t
should be kept at a valid level until the program or erase operation has completed and its result
CL
tCHSL
must be greater than or equal to 1/ f
Alt.
AC characteristics (continued)
tDVCH
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Program OTP cycle time (64 bytes)
Subsector Erase cycle time
Sector Erase cycle time
Bulk Erase cycle time
Test conditions specified in
High Impedance
A
= 25° C.
MSB IN
tSLCH
Parameter
tCHDX
C
.
Table 13
tCLCH
tCHSH
Min
and
LSB IN
Table 15
int(n/8) × 0.025
Typ
1.3
0.8
0.2
70
34
1
(1)
tCHCL
tSHSL
tSHCH
(8)
Max
150
15
80
5
3
AI13728
Unit
ms
ms
ms
ms
s
s

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