S25FL064A0LMFI001 Spansion Inc., S25FL064A0LMFI001 Datasheet - Page 27

S25FL064A0LMFI001

Manufacturer Part Number
S25FL064A0LMFI001
Description
Manufacturer
Spansion Inc.
Datasheet

Specifications of S25FL064A0LMFI001

Cell Type
NOR
Density
64Mb
Access Time (max)
9ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
SOIC W
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
8M
Supply Current
13mA
Mounting
Surface Mount
Pin Count
16
Lead Free Status / RoHS Status
Compliant

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28
9.12.1
Release from Deep Power Down and Read Electronic Signature (RES)
The device features an 8-bit Electronic Signature, which can be read using the RES command. See
Figure 9.13
Signature is not to be confused with the identification data obtained using the RDID command. The device
offers the Electronic Signature so that it can be used with previous devices that offered it; however, the
Electronic Signature should not be used for new designs, which should read the RDID data instead.
After the host system drives CS# low, it must write the RES command followed by 3 dummy bytes to SI (each
bit is latched on SI during the rising edge of SCK). The Electronic Signature is then output on SO; each bit is
shifted out on the falling edge of SCK. The RES operation is terminated by driving CS# high after the
Electronic Signature is read at least once. Additional clock cycles on SCK with CS# low cause the device to
output the Electronic Signature repeatedly.
When CS# is driven high, the device transitions from DP mode to the standby mode after a delay of t
previously described. The RES command always provides access to the Electronic Signature of the device
and can be applied even if DP mode has not been entered.
Any RES command issued while an erase, program, or WRSR operation is in progress not executed, and the
operation continues uninterrupted.
Notes
1. The S25FL064A has a manufacturer ID of 01h, and a device ID consisting of the memory type (02h) and the memory capacity (16h).
2. The S25FL064A has an Electronic Signature ID of 16h.
Status Register
Power Saving
Write Control
SCK
CS#
Operation
SO
Program
SI
Erase
Read
Hi-Z
and
Figure 9.13 Release from Deep Power Down and Read Electronic Signature (RES)
FAST_READ
Table 9.4 on page 28
Command
WREN
WRSR
READ
RDSR
WRDI
RDID
RES
0
DP
SE
BE
PP
1
2
Command
3
Read Data Bytes
Read Data Bytes at Higher Speed
Read Identification
Write Enable
Write Disable
Sector Erase
Bulk (Chip) Erase
Page Program
Read from Status Register
Write to Status Register
Deep Power Down
Release from Deep Power Down
Release from Deep Power Down and
Read Electronic Signature
4
5
6
Table 9.4 Command Definitions
for the command sequence and signature value. The Electronic
Description
S25FL064A
7
MSB
23 22 21
8
Command Sequence
(Note 1)
D a t a
9 10
3 Dummy Bytes
(Note 2)
28 29 30 31 32 33 34 35 36 37 38
3 2
Deep Power-down Mode
S h e e t
1
Command Code
D8H (1101 1000)
C7H (1100 0111)
ABH (1010 1011)
ABH (1010 1011)
03H (0000 0011)
0BH (0000 1011)
9FH (1001 1111)
06H (0000 0110)
04H (0000 0100)
02H (0000 0010)
01H (0000 0001)
B9H (1011 1001)
05H (0000 0101)
0
MSB
One-Byte
7
6
5
Electronic ID out
S25FL064A_00_C4 February 27, 2009
4
Address
3
Bytes
3
3
0
0
0
3
0
3
0
0
0
0
0
2
1
Dummy
0
Byte
0
1
0
0
0
0
0
0
0
0
0
0
3
t
RES
Data Bytes
Standby Mode
1 to 256
1 to ∞
1 to ∞
1 to ∞
1 to ∞
1 to 3
0
0
0
0
1
0
0
RES
, as

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