SGP10N60RUFDTUNL Fairchild Semiconductor, SGP10N60RUFDTUNL Datasheet

SGP10N60RUFDTUNL

Manufacturer Part Number
SGP10N60RUFDTUNL
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SGP10N60RUFDTUNL

Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
16A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Compliant
©2002 Fairchild Semiconductor Corporation
SGP10N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
I
I
T
P
T
T
T
R
R
R
C
CM (1)
F
FM
stg
SC
J
L
CES
GES
D
Symbol
JC
JC
JA
Symbol
(IGBT)
(DIODE)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G C E
Description
Parameter
TO-220
T
C
= 25 C unless otherwise noted
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
Features
• Short circuit rated 10us @ T
• High speed switching
• Low saturation voltage : V
• High input impedance
• CO-PAK, IGBT with FRD : t
= 25 C
= 100 C
= 100 C
= 100 C
= 25 C
= 100 C
G
G
SGP10N60RUFD
Typ.
--
--
--
-55 to +150
-55 to +150
600
300
16
10
30
12
92
10
75
30
C
C
E
E
20
CE(sat)
rr
C
= 42ns (typ.)
= 100 C, V
Max.
62.5
1.6
2.5
= 2.2 V @ I
IGBT
GE
SGP10N60RUFD Rev. A1
C
= 15V
Units
= 10A
Units
us
C/W
C/W
C/W
W
W
V
V
A
A
A
A
A
C
C
C

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SGP10N60RUFDTUNL Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case JC R (DIODE) Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA ©2002 Fairchild Semiconductor Corporation Features • Short circuit rated 10us @ T • High speed switching • Low saturation voltage : V • High input impedance • CO-PAK, IGBT with FRD : TO-220 ...

Page 2

... Gate-Collector Charge gc L Internal Emitter Inductance e Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Diode Peak Reverse Recovery I rr Current Q Diode Reverse Recovery Charge rr ©2002 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions Min 0V 250uA 600 0V 1mA ...

Page 3

... Case Temperature, T Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter T = 25℃ 20A 4 10A Gate - Emitter Voltage, V Fig 5. Saturation Voltage vs. V ©2002 Fairchild Semiconductor Corporation 30 Common Emitter V = 15V 25℃ ━━ 125℃ ------ C 12V 10V [V] CE Fig 2. Typical Saturation Voltage Characteristics ...

Page 4

... Fig 9. Turn-Off Characteristics vs. Gate Resistance Common Emitter = ± 15V 25℃ ━━ 125℃ ------ C 100 Collector Current, I Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Common Emitter Common Emitter 1MHz 25℃ 10A 25℃ ━━ 125℃ ------ C 100 Cies Coes Cres ...

Page 5

... C Curves must be derated linearly with increase in temperature 0.1 0 Collector-Emitter Voltage, V Fig 15. SOA Characteristics 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 single pulse -5 10 ©2002 Fairchild Semiconductor Corporation 15 Common Emitter [A] C Fig 14. Gate Charge Characteristics 50 50us 100us 1㎳ 100 1000 ...

Page 6

... Fig 18. Forward Characteristics 600 V = 200V 12A F 500 = 25℃ ━━ 100℃ ------ C 400 300 200 100 0 100 di/dt [A/us] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation 100 V = 200V 12A F = 25℃ ━━ 100℃ ------ 100 3 [V] FM Fig 19. Reverse Recovery Current 100 80 ...

Page 7

... Mechanical Dimensions ©2002 Fairchild Semiconductor Corporation TO - 220 Dimensions in Millimeters SGP10N60RUFD Rev. A1 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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