FGA25N120ANTUNL Fairchild Semiconductor, FGA25N120ANTUNL Datasheet - Page 4

• Manufacturer Part Number: FGA25N120ANTUNL
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120ANTUNL

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Compliant

©2004 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 11. Turn-On Characteristics vs.
Fig 9. Turn-Off Characteristics vs.
4000
3500
3000
2500
2000
1500
1000
1000
100
500
100
10
0
10
1
0
Common Emitter
V
T
T
Gate Resistance
Common Emitter
V
I
T
T
C
C
GE
C
C
C
Collector Current
CC
= 25℃
= 125℃
= 25A
= 25℃
= 125℃
= ± 15V, R
= 600V, V
10
Coss
Crss
Ciss
Collector-Emitter Voltage, V
20
20
Collector Current, I
GE
Gate Resistance, R
G
= 10
= ± 15V
30
30
40
C
G
[A]
10
Common Emitter
V
T
[ ]
C
GE
50
= 25℃
CE
40
= 0V, f = 1MHz
[V]
td(on)
td(off)
60
tr
tf
50
70
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
Fig 8. Turn-On Characteristics vs. Gate
100
100
10
10
1
10
0
0
Common Emitter
V
T
T
Common Emitter
V
I
T
T
C
C
C
C
C
GE
CC
Resistance
= 25A
= 25℃
= 125℃
= 25℃
= 125℃
Collector Current
= ± 15V, R
= 600V, V
10
tr
10
td(on)
20
20
GE
Gate Resistance, R
20
Collector Current, I
Gate Resistance, R
G
= ± 15V
= 10
30
30
30
40
40
Common Emitter
V
I
T
T
C
CC
C
C
= 25A
= 25℃
= 125℃
= 600V, V
C
G
G
[A]
[ ]
[ ]
50
50
40
GE
= ± 15V
60
td(off)
60
tf
Eon
Eoff
FGA25N120AN Rev. A
70
50
70