K4T1G164QE-HCF8000 Samsung Semiconductor, K4T1G164QE-HCF8000 Datasheet - Page 2

• Manufacturer Part Number: K4T1G164QE-HCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR2 SDRAMr

Specifications of K4T1G164QE-HCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Table of Contents
1.0 Ordering Information ................................................................................................................... 4
2.0 Key Features ................................................................................................................................ 4
3.0 Package Pinout/Mechanical Dimension & Addressing ............................................................ 5
4.0 Input/Output Functional Description ....................................................................................... 10
5.0 DDR2 SDRAM Addressing ........................................................................................................ 11
6.0 Absolute Maximum DC Ratings ................................................................................................ 12
7.0 AC & DC Operating Conditions ................................................................................................ 12
8.0 ODT DC electrical characteristics ............................................................................................ 14
9.0 OCD default characteristics ...................................................................................................... 15
10.0 IDD Specification Parameters and Test Conditions ............................................................. 16
11.0 DDR2 SDRAM IDD Spec Table ................................................................................................ 18
12.0 Input/Output capacitance ........................................................................................................ 19
13.0 Electrical Characteristics & AC Timing for DDR2-800/667 ................................................... 19
14.0 General notes, which may apply for all AC parameters....................................................... 22
15.0 Specific Notes for dedicated AC parameters ........................................................................ 24
K4T1G084QE
K4T1G164QE
K4T1G044QE
3.1 x4 package pinout (Top View) : 60ball FBGA Package
3.2 x8 package pinout (Top View) : 60ball FBGA Package
3.3 x16 package pinout (Top View) : 84ball FBGA Package
3.4 FBGA Package Dimension (x4/x8)
3.5 FBGA Package Dimension (x16)
7.1 Recommended DC Operating Conditions (SSTL - 1.8)
7.2 Operating Temperature Condition
7.3 Input DC Logic Level
7.4 Input AC Logic Level
7.5 AC Input Test Conditions
7.6 Differential input AC logic Level
7.7 Differential AC output parameters
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
13.3 Timing Parameters by Speed Grade
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Rev. 1.1 December 2008
DDR2 SDRAM