HYB39S256800CTL-8 Infineon Technologies, HYB39S256800CTL-8 Datasheet - Page 18

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HYB39S256800CTL-8

Manufacturer Part Number
HYB39S256800CTL-8
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of HYB39S256800CTL-8

Lead Free Status / Rohs Status
Not Compliant
Parameter
Activate(a) to Activate(b)
Command period
CAS(a) to CAS(b) Command
period
Refresh Cycle
Refresh Period (8192 cycles)
Self Refresh Exit Time
Read Cycle
Data Out Hold Time
Data Out to Low Impedance Time
Data Out to High Impedance Time
DQM Data Out Disable Latency
Write Cycle
Data Input to Precharge
(write recovery)
DQM Write Mask Latency
INFINEON Technologies
Symbol
t
t
t
t
t
t
SREX
t
t
DQW
t
RRD
CCD
t
DQZ
REF
WR
OH
HZ
LZ
min.
15
PC133-
1
1
3
0
3
2
0
-7.5
333
max. min.
18
64
7
2
Limit Values
16
PC100-
1
1
3
0
3
2
0
222
-8
HYB39S256400/800/160CT(L)
256MBit Synchronous DRAM
max. min.
64
8
2
16
PC100-
1
1
3
0
3
2
0
-8A
322
max.
64
8
2
Unit
ns
CLK
ms
CLK
ns
ns
ns
CLK
CLK
CLK
5
6
2,
7
8
8.00

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