TIP112TUNL Fairchild Semiconductor, TIP112TUNL Datasheet
Home Discrete Semiconductor Products BJT - Darlington TIP112TUNL
Manufacturer Part Number
TIP112TUNL
Manufacturer
Fairchild Semiconductor
Specifications of TIP112TUNL
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage
100V
Emitter-base Voltage
5V
Collector-emitter Saturation Voltage
2.5@8mA@2AV
Collector Current (dc) (max)
2A
Dc Current Gain
500@2A@4V/1000@1A@4V
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Lead Free Status / Rohs Status
Compliant
TIP110/TIP111/TIP112 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
TIP110/TIP111/TIP112
NPN Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• Complementary to TIP115/116/117
• High DC Current Gain : h
• Low Collector-Emitter Saturation Voltage
• Industrial Use
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
V
V
I
I
I
P
T
T
C
CP
B
CBO
CEO
EBO
C
J
STG
Symbol
Collector-Base Voltage
Collector-Emitter Voltage : TIP110
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
FE
=1000 @ V
1.Base
1
CE
=4V, I
2.Collector
a
C
T
=25°C)
=25°C)
a
TO-220
: TIP111
: TIP112
: TIP111
: TIP112
= 25°C unless otherwise noted
: TIP110
C
Parameter
=1A(Min.)
3.Emitter
1
B
R1
R2
Equivalent Circuit
@
@
10k W
0.6kW
R1
R2
C
E
- 65 ~ 150
Ratings
100
100
150
60
80
60
80
50
50
5
2
4
2
November 2008
www.fairchildsemi.com
Units
mA
°C
°C
W
W
V
V
V
V
V
V
V
A
A
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TIP112TUNL Summary of contents
... P Collector Dissipation (T C Collector Dissipation (T T Junction Temperature J T Storage Temperature STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. © 2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 =4V, I =1A(Min Equivalent Circuit B TO-220 1 2.Collector 3.Emitter ...
... DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (on) Base-Emitter On Voltage BE C Output Capacitance ob * Pulse Test: Pulse Width£300ms, Duty Cycle£2% © 2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 T =25°C unless otherwise noted a Test Condition : TIP110 I = 30mA TIP111 : TIP112 : TIP110 ...
... V (sat 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area © 2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 10000 200 150 1000 I = 500 (sat TIP 110 TIP 111 ...
... Mechanical Dimensions © 2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 TO220 4 www.fairchildsemi.com ...
... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...
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