MPC8321CVRADDC Freescale Semiconductor, MPC8321CVRADDC Datasheet - Page 13

• Manufacturer Part Number: MPC8321CVRADDC
• Description: IC MPU PWRQUICC II 516-PBGA
• Manufacturer: Freescale Semiconductor
• Series: PowerQUICC II PROr

Specifications of MPC8321CVRADDC

• Processor Type: MPC83xx PowerQUICC II Pro 32-Bit
• Speed: 266MHz
• Voltage: 1V
• Mounting Type: Surface Mount
• Package / Case: 516-PBGA
• Processor Series: MPC8xxx
• Core: e300
• Data Bus Width: 32 bit
• Development Tools By Supplier: MPC8323E-MDS-PB
• Maximum Clock Frequency: 266 MHz
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Data Ram Size: 16 KB
• I/o Voltage: 1.8 V, 3.3 V
• Interface Type: I2C, SPI, UART
• Minimum Operating Temperature: - 40 C
• Core Size: 32 Bit
• Program Memory Size: 32KB
• Cpu Speed: 266MHz
• Embedded Interface Type: I2C, SPI, USB, UART
• Digital Ic Case Style: BGA
• No. Of Pins: 516
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Input current
Note:
1. This specification applies when operating from 3.3 V supply.
6
This section describes the DC and AC electrical specifications for the DDR1 and DDR2 SDRAM interface
of the MPC8323E. Note that DDR1 SDRAM is Dn_GV
Dn_GV
6.1
Table 12
MPC8323E when Dn_GV
Table 13
Freescale Semiconductor
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. D n
2. MVREF n
3. V
4. Output leakage is measured with all outputs disabled, 0 V
Input/output capacitance: DQ, DQS
Peak-to-peak noise on MVREF n
equal to MVREF n
TT
MPC8323E PowerQUICC II Pro Integrated Communications Processor Family Hardware Specifications, Rev. 4
_
GV
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
Parameter/Condition
DDR1 and DDR2 SDRAM
DD
DD
provides the recommended operating conditions for the DDR2 SDRAM component(s) of the
provides the DDR2 capacitance when Dn_GV
Characteristic
DDR1 and DDR2 SDRAM DC Electrical Characteristics
REF
(typ) = 1.8 V. The AC electrical specifications are the same for DDR1 and DDR2 SDRAM.
is expected to be within 50 mV of the DRAM D n
Table 12. DDR2 SDRAM DC Electrical Characteristics for D n
is expected to be equal to 0.5 × D n
Parameter/Condition
REF
OUT
OUT
. This rail should track variations in the DC level of MVREF n
Table 11. Reset Signals DC Electrical Characteristics (continued)
= 0.280 V)
Table 13. DDR2 SDRAM Capacitance for D n
= 1.35 V)
DD
(typ) = 1.8 V
REF
MVREF n
may not exceed ±2% of the DC value.
D n
Symbol
Symbol
_
I
V
V
I
IN
V
I
I
OZ
OH
OL
GV
TT
IH
IL
DD
REF
.
_
GV
0 V ≤ V
DD
MVREF n
Condition
MVREF n
0.49 × D n
, and to track D n
Symbol
IN
≤
_
GV
V
C
≤ OV
–13.4
1.71
–0.3
–9.9
13.4
OUT
Min
IO
REF
REF
DD
DD
DD
_
DD
≤
GV
at all times.
+ 0.125
– 0.04
(typ) = 1.8 V.
(typ) = 2.5 V and DDR2 SDRAM is
D n
DD
_
_
GV
GV
_
Min
DD
Min
GV
DD
6
—
.
MVREF n
MVREF n
DC variations as measured at the receiver.
DD
0.51 × D n
REF
D n
(typ) = 1.8 V
_
.
_
GV
GV
Max
1.89
REF
9.9
—
—
REF
DD
DD
_
Max
GV
+ 0.3
Max
– 0.125
+ 0.04
(typ) = 1.8 V
8
±5
DD
DDR1 and DDR2 SDRAM
Unit
Unit
mA
mA
μA
Unit
pF
V
V
V
V
V
μA
Notes
Notes
Notes
—
—
—
—
1
2
3
4
1
—
13