FNA41060B2 Fairchild Semiconductor, FNA41060B2 Datasheet - Page 8

• Manufacturer Part Number: FNA41060B2
• Description: IGBT Modules Smart Power Module Motion-SPM
• Manufacturer: Fairchild Semiconductor

Specifications of FNA41060B2

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 10 A
• Power Dissipation: 34 W
• Package / Case: SPM26-AA
• Mounting Style: Through Hole
• Lead Free Status / Rohs Status: Details

FNA41060/B2 Rev. C
Bootstrap Diode Part
Note:
6. Built in bootstrap diode includes around 15 Ω resistance characteristic.
Symbol
V
t
rr
F
Forward Voltage
Reverse Recovery Time
600
550
500
450
400
350
300
250
200
150
100
50
0
-20
Parameter
-10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Figure 7. Built in Bootstrap Diode Characteristic
Figure. 6. R-T Curve of The Built-in Thermistor
0
0
Built in Bootstrap Diode V
1
10
2
3
20
I
I
F
F
= 0.1A, T
= 0.1A, T
4
30
Temperature T
5
20
16
12
8
4
0
50
40
6
R-T Curve
C
C
= 25°C
= 25°C
Conditions
V
7
60
50
8
F
R-T Curve in 50
[V]
8
70
60
Temperature [ ]
F
9
TH
-I
F
[ ]
80
10
70
℃
Characteristic
11
90
80
℃
12
100
℃
~ 125
90
T
13
C
=25 ℃
110
100 110 120
14
℃
Min.
15
120
-
-
Typ.
2.5
80
Max.
-
-
www.fairchildsemi.com
Units
ns
V