LH28F008SAHT-T9 Sharp Electronics, LH28F008SAHT-T9 Datasheet - Page 12

• Manufacturer Part Number: LH28F008SAHT-T9
• Manufacturer: Sharp Electronics

Specifications of LH28F008SAHT-T9

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Compliant

Data Protection
Depending on the application, the system designer may
choose to make the V
only when memory byte writes/block erases are required) or
hardwired to V
cannot be altered. The LH28F008SAHT-T9 Command User
Interface architecture provides protection from unwanted
byte write or block erase operations even when high voltage
is applied to V
whenever V
when RP# is at V
dates either design practice and encourages optimization of
the processor-memory interface.
The two-step byte write/block erase Command User Inter-
face write sequence provides additional software write pro-
tection.
4.
Flash memory reads, erases and writes in-system via the
local CPU. All bus cycles to or from the flash memory con-
form to standard microprocessor bus cycles.
Read
The LH28F008SAHT-T9 has three read modes. The
memory can be read from any of its blocks, and information
can be read from the intelligent identifier or Status Register.
V
NOTES:
1. Refer to DC Characteristics. When V
2. X can be V
3. RY/BY# is V
4. Command writes involving block erase or byte write are only successfully executed when V
5. Refer to Table 3 for valid D
6. Don't use the timing both OE# and WE# are V
PP
Read
Output Disable
Standby
Deep PowerDown
Intelligent Identifier (Mfr)
Intelligent Identifier (Device)
Write
not busy, in Erase Suspend mode or deep powerdown mode.
can be at either V
BUS OPERATION
CC
IL
OL
or V
Mode
PP
is below the write lockout voltage V
PPH
when the Write State Machine is executing internal block erase or byte write algorithms. It is V
. Additionally, all functions are disabled
IH
IL
. When V
for control pins and addresses, and V
. The LH28F008SAHT-T9 accommo-
PP
PPL
power supply switchable (available
or V
I
N
during a write operation.
PP
PPH
=V
.
PPL
PP
=V
Notes
4,5,6
, memory contents
PPL
6
6
6
, memory contents can be read but not written or erased.
IL
.
Table 2. Bus Operations
RP#
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
IL
LKO
PPL
LHF08ST9
, or
or V
CE#
V
V
V
V
V
V
X
PPH
IH
IL
IL
IL
IL
IL
The first task is to write the appropriate read mode com-
mand to the Command User Interface (array, intelligent
identifier, or Status Register). The LH28F008SAHT-T9 au-
tomatically resets to Read Array mode upon initial device
powerup or after exit from deep powerdown. The
LH28F008SAHT-T9 has four control pins, two of which
must be logically active to obtain data at the outputs. Chip
Enable (CE#) is the device selection control, and when
active enables the selected memory device. Output Enable
(OE#) is the data input/output (DQ
and when active drives data from the selected memory onto
the I/O bus. RP# and WE# must also be at V
illustrates read bus cycle waveforms.
Output Disable
With OE# at a logic-high level (V
disabled. Output pins (DQ
pedance state.
Standby
CE# at a logic-high level (V
T9 in standby mode. Standby operation disables much of
the LH28F008SA’s circuitry and substantially reduces de-
vice power consumption. The outputs (DQ
placed in a high-impedence state independent of the status
of OE#. If the LH28F008SAHT-T9 is deselected during
block erase or byte write, the device will continue
functioning and consuming normal active power until the
operation completes.
for V
OE#
V
V
V
V
V
X
X
PP
IH
IH
IL
IL
IL
. See DC Characteristics for V
(1,2)
WE#
V
V
V
V
V
X
X
IH
IH
IH
IH
IL
V
V
A
PP
X
X
X
X
X
IH
IL
0
=V
PPH
0
IH
-DQ
V
.
) places the LH28F008SAHT-
X
X
X
X
X
X
X
PP
7
IH
) are placed in a high-im-
PPL
0
), the device outputs are
-DQ
High Z
High Z
High Z
OH
DQ
D
and V
A2H
89H
D
OUT
7
when the WSM is
) direction control,
IN
0-7
PPH
voltages.
IH
0
RY/BY#
-DQ
. Figure 8
V
V
V
X
X
X
X
OH
OH
OH
7
) are
(3)
9