LH28F008SAHT-T9 Sharp Electronics, LH28F008SAHT-T9 Datasheet - Page 25

• Manufacturer Part Number: LH28F008SAHT-T9
• Manufacturer: Sharp Electronics

Specifications of LH28F008SAHT-T9

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Compliant

AC CHARACTERISTICS - Write Operations
NOTES:
1. Read timing characteristics during erase and byte write operations are the same as during read-only operations. Refer to AC
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
4. Refer to Table 3 for valid D
5. The on-chip Write State Machine incorporates all byte write and block erase system functions and overhead of standard SHARP
6. Byte write and block erase durations are measure to completion (SR.7=1, RY/ BY#=V
7. See High Speed AC Input/Output Reference Waveforms and High Speed AC Testing Load Circuits for testing characteristics.
8. See AC Input/Output Reference Waveforms and AC Testing Load Circuits for testing characteristics.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHQV1
WHQV2
WHGL
QVVL
Characteristics for Read-Only Operations.
flash memory, including byte program and verify (byte write) and block precondition, precondition verify, erase and erase verify
(block erase).
nation of byte write/block erase success (SR.3/4/5=0).
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
WC
PS
CS
WP
VPS
AS
DS
DH
AH
CH
WPH
VPH
Write Cycle Time
RP# High Recovery to
WE# Going Low
CE# Setup to WE# Going
Low
WE# Pulse Width
V
High
Address Setup to WE#
Going High
Data Setup to WE# Going
High
Data Hold from WE# High
Address Hold from WE#
High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going
Low
Duration of Byte Write
Operation
Duration of Block Erase
Operation
Write Recovery before
Read
V
RY/BY# High
PP
PP
Setup to WE# Going
Hold from Valid SRD,
Versions
Parameter
IN
IN
for byte write or block erasure.
for byte write or block erasure.
(1)
Notes
5,6
5,6
2,6
LHF08ST9
2
2
3
4
V
Min.
100
0.3
85
50
40
40
25
CC
1
0
5
5
0
6
0
0
=5V±0.25V
Max.
100
OH
(7)
). V
PP
should be held at V
Min.
100
V
0.3
90
50
40
40
25
1
0
5
5
0
6
0
0
CC
=5V±0.5V
PPH
Max.
100
(8)
until determi-
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
s
22