LH28F008SAHT-T9 Sharp Electronics, LH28F008SAHT-T9 Datasheet - Page 8

• Manufacturer Part Number: LH28F008SAHT-T9
• Manufacturer: Sharp Electronics

Specifications of LH28F008SAHT-T9

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Compliant

A
DQ
CE#
RP#
OE#
WE#
RY/BY#
V
V
GND
NC
0
PP
CC
Symbol
-A
0
-DQ
19
7
INPUT/OUTPUT
OUTPUT
SUPPLY
SUPPLY
SUPPLY
INPUT
INPUT
INPUT
INPUT
INPUT
Type
ADDRESS INPUTS: for memory addresses. Addresses are internally
latched during a write cycle.
DATA INPUT/OUTPUTS: Inputs data and commands during Command
User Interface write cycles; outputs data during memory array, Status
Register and Identifier read cycles. The data pins are active high and float
to tri-state off when the chip is deselected or the outputs are disabled.
Data is internally latched during a write cycle.
CHIP ENABLE: Activates the device's control logic input buffers
decoders, and sense amplifiers. CE# is active low; CE# high deselects the
memory device and reduces power consumption to standby levels.
RESET/POWERDOWN: Puts the device in deep powerdown mode and
resets internal automation. RP# is active low; RP# high gates normal
operation. RP# also locks out block erase or byte write operations when
active low, providing data protection during power transitions.
OUTPUT ENABLE: Gates the device's outputs through the data buffers
during a read cycle. OE# is active low.
WRITE ENABLE: Controls writes to the Command User Interface and
array blocks. WE# is active low. Addresses and data are latched on the
rising edge of the WE# pulse.
READY/BUSY#: Indicates the status of the internal Write State Machine.
When low, it indicates that the WSM is performing a block erase or byte
write operation. RY/BY# high indicates that the WSM is ready for new
commands, block erase is suspended or the device is in deep
powerdown mode. RY/BY# is always active and does NOT float to tri-state
off when the chip is deselected or data outputs are disabled.
BLOCK ERASE/BYTE WRITE POWER SUPPLY: for erasing blocks of
the array or writing bytes of each block.
DEVICE POWER SUPPLY (5V±0.5V, 5V±0.25V)
GROUND
NO CONNECT: Lead is not internal connected; recommend to be floated.
With V
PP
Table 1. Pin Description
<V
PPLMAX
LHF08ST9
, memory contents cannot be altered.
Name and Function
NOTE:
5