LH28F008SAHT-T9 Sharp Electronics, LH28F008SAHT-T9 Datasheet - Page 26

LH28F008SAHT-T9

Manufacturer Part Number
LH28F008SAHT-T9
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F008SAHT-T9

Cell Type
NOR
Density
8Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
20b
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
11.4 to 12.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
1M
Supply Current
50mA
Mounting
Surface Mount
Pin Count
40
Lead Free Status / Rohs Status
Compliant
15. BLOCK ERASE AND BYTE WRITE PERFORMANCE
NOTES:
1. T
2. Excludes System-Level Overhead.
AC CHARACTERISTICS - Reset Operation
NOTES:
1. If RP# is asserted when the WSM is not busy (RY/BY#="1"), the reset will complete within 100ns.
2. A reset time, t PHQV , is required from the latter of RY/BY# or RP# going high until outputs are valid.
t
t
t
Block Erase Time
Block Write Time
Byte Write Time
Sym.
PLPH
PLRH
PLPLC
A
=+25˚C, 12.0V V
RY/BY#(R)
RY/BY#(R)
RP# Pulse Low Time
(If RP# is tied to V
RP# Low to Reset during Block Erase or Byte Write
(If RP# is tied to V
Reset Cycle Time (During Read Array Mode)
Parameter
RP#(P)
RP#(P)
PP
.
V
V
V
V
V
V
V
V
OH
OL
IH
IL
OH
OL
IH
IL
CC
CC
, this specification is not applicable)
, this specification is not applicable)
Parameter
Notes
2
2
AC Waveform for Reset Operation
RESET AC Specifications
(B) Reset During Block Erase or Byte Write
t
t
PLPH
PLPH
(A) Reset During Read Array Mode
Min.
LHF08ST9
t
PLRH
Typ.
t
PLPLC
1.6
0.6
8
(1)
Max.
2.1
10
Notes
Unit
µs
s
s
1,2
Min.
100
4
Max.
12
Unit
ns
µs
µs
23

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