LH28F008SAHT-T9 Sharp Electronics, LH28F008SAHT-T9 Datasheet - Page 28

• Manufacturer Part Number: LH28F008SAHT-T9
• Manufacturer: Sharp Electronics

Specifications of LH28F008SAHT-T9

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Compliant

16. ALTERNATIVE CE#-CONTROLLED WRITES
NOTES:
1. Chip-Enable Controlled Writes: Write operations are driven by the valid combination of CE# and WE#. In systems where CE#
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
4. Refer to Table 3 for valid D
5. Byte write and block erase durations are measured to completion (SR.7=1, RY/BY#=V
6. See High Speed AC Input/Output Reference Waveforms and High Speed AC Testing Load Circuits for testing characteristics.
7. See AC Input/Output Reference Waveforms and AC Testing Load Circuits for testing characteristics.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHEL
WLEL
ELEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHQV1
EHQV2
EHGL
QVVL
Symbol
defines the write pulsewidth (within a longer WE# timing waveform), all setup, hold and inactive WE# times should be measured
relative to the CE# waveform.
nation of byte write/block erase success (SR.3/4/5=0).
t
t
t
t
t
t
t
t
t
t
t
t
WC
PS
WS
CP
VPS
AS
DS
DH
AH
WH
EPH
VPH
Write Cycle Time
RP# High Recovery to
CE# Going Low
WE# Setup to CE# Going
Low
CE# Pulse Width
V
High
Address Setup to CE#
Going High
Data Setup to CE# Going
High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to RY/BY# Going
Low
Duration of Byte Write
Operation
Duration of Block Erase
Operation
Write Recovery before
Read
V
RY/BY# High
PP
PP
Setup to CE# Going
Hold from Valid SRD,
Versions
Parameter
IN
IN
for byte write or block erasure.
for byte write or block erasure.
Notes
2,5
2
2
3
4
5
5
LHF08ST9
(1)
V
Min.
100
0.3
85
50
40
40
25
CC
1
0
5
5
0
6
0
0
=5V±0.25V
Max.
100
(6)
OH
). V
PP
should be held at V
Min.
100
V
0.3
90
50
40
40
25
1
0
5
5
0
6
0
0
CC
=5V±0.5V
Max.
PPH
100
(7)
until determi-
Unit
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
25