FQD60N03L Fairchild Semiconductor, FQD60N03L Datasheet

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FQD60N03L

Manufacturer Part Number
FQD60N03L
Description
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of FQD60N03L

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
30A
Power Dissipation
45W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-252
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD60N03L
Manufacturer:
FAIRCHILD
Quantity:
1 000
©2004 Fairchild Semiconductor Corporation
FQD60N03L
N-Channel Logic Level MOSFETs
30V, 30A, 0.023 Ω
General Description
This device employs advanced MOSFET technology and
features low gate charge while maintaining low on-
resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
R
D
J
DSS
GS
D
θ JC
θ JA
θ JA
, T
Symbol
Device Marking
STG
FQD60N03L
SOURCE
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Power dissipation
Derate above 25
Operating and Storage Temperature
GATE
TO-252AA
FDD SERIES
C
C
C
FQD60N03L
= 25
= 100
= 25
o
C
Device
Parameter
o
o
C, V
C, V
o
C, V
GS
GS
(FLANGE)
GS
DRAIN
T
= 10V)
= 10V, R
= 4.5V)
C
=25°C unless otherwise noted
TO-252AA
θJA
Package
= 52
o
C/W)
Features
• Fast switching
• r
• r
• Q
• Q
• C
DS(ON)
DS(ON)
2
g
gd
ISS
copper pad area
(Typ) = 9.6nC, V
(Typ) = 3.4nC
(Typ) = 900pF
Reel Size
330mm
= 0.014Ω (Typ), V
= 0.024Ω (Typ), V
-55 to 150
Ratings
Figure 4
0.37
±20
7.9
30
30
19
45
GS
G
= 5V
Tape Width
GS
GS
16mm
D
S
= 10V
= 4.5V
2.73
100
52
2500 units
Quantity
April 2004
Units
W/
FQD60N03L Rev. B1
o
W
V
V
A
A
A
A
C
o
o
o
o
C
C/W
C/W
C/W

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FQD60N03L Summary of contents

Page 1

... C Parameter 10V 4.5V 10V C/W) θ copper pad area Package Reel Size TO-252AA 330mm April 2004 = 10V Ratings Units 30 V ± 7.9 A Figure 0. -55 to 150 C o 2.73 C/W o 100 C C/W Tape Width Quantity 16mm 2500 units FQD60N03L Rev. B1 ...

Page 2

... 15V 7. Ω 2 19A 10A 19A, dI /dt = 100A/µ 19A, dI /dt = 100A/µ Min Typ Max 125 250 ±100 - - 0.014 0.023 - 0.024 0.030 - 900 - - 210 - - 9 15V DD = 19A - 1.0 1 1.0mA - 3 3 120 180 - - - - 1. 1 FQD60N03L Rev. B1 Units V µ Ω µ ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability V = 10V 4. 100 125 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK θJC θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 150 - 125 - FQD60N03L Rev. B1 150 1 1 ...

Page 4

... Breakdown Voltage vs Junction Temperature V = 10V 4. 3. 3.0V GS PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 2 DRAIN TO SOURCE VOLTAGE ( PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX V = 10V - 120 JUNCTION TEMPERATURE ( 250µ 120 JUNCTION TEMPERATURE ( C) J FQD60N03L Rev. B1 2.5 = 30A D 160 160 ...

Page 5

... Figure 14. Switching Time vs Gate Resistance DUT 0.01 Ω Figure 16. Unclamped Energy Waveforms = 15V WAVEFORMS IN DESCENDING ORDER 30A 15A GATE CHARGE (nC) g Gate Currents = 10V 15V 7. d(OFF d(ON GATE TO SOURCE RESISTANCE ( Ω DSS FQD60N03L Rev ...

Page 6

... Figure 17. Gate Charge Test Circuit Figure 19. Switching Time Test Circuit ©2004 Fairchild Semiconductor Corporation (Continued DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms Q g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FQD60N03L Rev 10V 90% ...

Page 7

... JM 75 (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ.2 θ 33.32+ 154/(1.73+Area) EQ.3 θ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FQD60N03L Rev. B1 ...

Page 8

... PSPICE Electrical Model .SUBCKT FQD60N03L rev June 5.0e- 3.9e-10 CIN 6 8 7.8e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 31.0 EDS EGS ESG EVTHRES EVTEMP LGATE GATE 1 LDRAIN 2 5 1.0e-9 RLGATE LGATE 1 9 4.53e-9 LSOURCE 3 7 5.38e-10 MMED MMEDMOD ...

Page 9

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 GATE RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FQD60N03L Rev. B1 DRAIN 2 SOURCE 3 ...

Page 10

... CTHERM6 2 tl 4.0e-2 RTHERM1 th 6 2.7e-3 RTHERM2 6 5 3.7e-3 RTHERM3 5 4 5.3e-2 RTHERM4 4 3 6.3e-1 RTHERM5 3 2 7.4e-1 RTHERM6 2 tl 7.6e-1 SABER Thermal Model SABER thermal model FQD60N03LT template thermal_model th tl thermal_c th ctherm.ctherm1 1.3e-3 ctherm.ctherm2 1.5e-3 ctherm.ctherm3 1.6e-3 ctherm.ctherm4 1.7e-3 ctherm.ctherm5 5.8e-3 ctherm ...

Page 11

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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