PSMN9R0-25YLC,115 NXP Semiconductors, PSMN9R0-25YLC,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN9R0-25YLC,115
• Description: MOSFET Power N-chnl25V9.1m logic lvl MOSFET in LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.1 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
PSMN9R0-25YLC
Product data sheet
Fig 4.
(A)
I
D
10
10
10
10
-1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Limit R
DSon
All information provided in this document is subject to legal disclaimers.
= V
1
DS
/ I
Rev. 2 — 1 November 2011
D
DC
10
PSMN9R0-25YLC
V
DS
t
100 μ s
p
10 ms
100 ms
1 ms
=10 μ s
(V)
© NXP B.V. 2011. All rights reserved.
003aag197
10
2
4 of 15