PSMN9R0-25YLC,115 NXP Semiconductors, PSMN9R0-25YLC,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN9R0-25YLC,115
• Description: MOSFET Power N-chnl25V9.1m logic lvl MOSFET in LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.1 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
PSMN9R0-25YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
50
40
30
20
10
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
2.8
Q
GS1
20
I
Q
D
GS
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Q
GS2
Q
G(tot)
V
GS
Q
(V) = 3.0
GD
40
All information provided in this document is subject to legal disclaimers.
003aag205
I
D
003aaa508
(A)
3.5
4.5
10
Rev. 2 — 1 November 2011
60
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
0
PSMN9R0-25YLC
5V
20V
5
60
V
DS
4.5V
10
= 12V
120
Q
© NXP B.V. 2011. All rights reserved.
V
003aag207
003aag206
G
GS
T
(nC)
j
= 10V
( ° C)
180
15
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