PSMN9R0-25YLC,115 NXP Semiconductors, PSMN9R0-25YLC,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN9R0-25YLC,115
• Description: MOSFET Power N-chnl25V9.1m logic lvl MOSFET in LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.1 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
Table 6.
PSMN9R0-25YLC
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
4.5
1
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
…continued
V
GS
2
(V) = 3.5
3
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003aag199
V
DS
(V)
2.4
2.2
2.8
2.6
3.0
Conditions
V
I
see
I
V
V
dI
see
S
S
Rev. 2 — 1 November 2011
GS
GS
GS
S
4
= 15 A; V
= 15 A; dI
/dt = -100 A/µs; V
Figure 17
Figure 18
= 0 V; V
= 0 V; V
= 0 V; I
S
GS
S
DS
DS
/dt = -100 A/µs;
= 15 A;
= 0 V; T
Fig 7.
= 12 V; f = 1 MHz
= 12 V
R
(m Ω )
DSon
DS
25
20
15
10
j
5
0
= 12 V;
= 25 °C;
of gate-source voltage; typical values
Drain-source on-state resistance as a function
0
4
PSMN9R0-25YLC
Min
-
-
-
-
-
-
8
Typ
4
0.86
20
10.5
11.4
8.6
12
© NXP B.V. 2011. All rights reserved.
003aag200
V
GS
-
Max
-
1.1
-
-
-
(V)
16
Unit
nC
V
ns
nC
ns
ns
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