SI3447DV Fairchild Semiconductor, SI3447DV Datasheet
SI3447DV
Manufacturer Part Number
SI3447DV
Description
P-Channel 1.8V Specified PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.SI3447DV.pdf
(5 pages)
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Si3447DV
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This
Fairchild’s low voltage PowerTrench process. It has
been
applications.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
P-Channel
optimized
.447
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
for
1.8V
D
battery
D
specified
TM
S
– Continuous
– Pulsed
Si3447DV
power
Device
Parameter
D
MOSFET
D
management
G
T
A
uses
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–5.5 A, –20 V.
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–5.5
–20
–20
1.6
0.8
78
30
8
= 33 m
= 43 m
= 60 m
6
5
4
@ V
@ V
@ V
April 2001
GS
GS
GS
Si3447DV Rev A (W)
3000 units
Quantity
= –4.5 V
= –2.5 V
= –1.8 V
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
SI3447DV Summary of contents
Page 1
... Reel Size 7’’ April 2001 –4.5 V DS(ON –2.5 V DS(ON –1.8 V DS(ON Ratings Units – –5.5 A –20 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units Si3447DV Rev A (W) ...
Page 2
... CA 2.0% Min Typ Max Units –20 V –12 mV/ C –1 A 100 nA –100 nA –0.4 –0.7 –1 mV – 1926 pF 530 pF 185 144 7.5 nC –1.3 A –0.7 –1.2 V (Note 2) Si3447DV Rev A(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -1.8V -2.0V -2.5V -4. DRAIN CURRENT ( -2 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Si3447DV Rev A( 1.2 ...
Page 4
... C 100 SINGLE PULSE TIME (SEC) Power Dissipation ° Si3447DV Rev A(W) ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...