NDS9956 Fairchild Semiconductor, NDS9956 Datasheet
NDS9956
Manufacturer Part Number
NDS9956
Description
Length/Height 1.75 mm Width 4.05 mm Depth 5.2 mm Power dissipation 2.5 W Transistor polarity N Channel (Dual) Current Id cont. 3.5 A Current Idm pulse 14 A Pitch row 6.3 mm c
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS9956.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDS9956
Manufacturer:
NS/国半
Quantity:
20 000
Company:
Part Number:
NDS9956A
Manufacturer:
NS
Quantity:
2 927
Company:
Part Number:
NDS9956A
Manufacturer:
Fairchild Semiconductor
Quantity:
35 651
Company:
Part Number:
NDS9956A
Manufacturer:
FSC
Quantity:
5 200
Part Number:
NDS9956A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NDS9956A_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NDS9956G
Manufacturer:
NS/国半
Quantity:
20 000
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
DSS
GSS
D
J
NDS9956A
Dual N-Channel Enhancement Mode Field Effect Transistor
N
,T
General Description
These N-Channel enhancement mode power field effect
transistors are produced using National's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as DC/DC conversion and DC motor
control where fast switching, low in-line power loss, and
resistance to transients are needed.
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1)
Features
3.7A, 30V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
6
5
8
7
DS(ON)
NDS9956A
-55 to 150
= 0.08
± 3.7
± 20
± 15
1.6
0.9
78
40
30
2
1
@ V
GS
= 10V
4
3
2
1
DS(ON)
February 1996
.
NDS9956A.SAM
Units
°C/W
°C/W
°C
W
V
V
A
Related parts for NDS9956
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
NDS9956 Summary of contents
Page 1
... Dual MOSFET in surface mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) February 1996 = 0. 10V DS(ON DS(ON NDS9956A 30 ± 20 ± 3.7 ± 1.6 1 0.9 -55 to 150 78 40 Units °C °C/W °C/W NDS9956A.SAM ...
Page 2
... 1.0 MHz GEN GEN 3 Min Typ Max Units µA 25 µA 100 nA -100 nA 1 1.7 2.8 V 0.7 1.2 2.2 0.06 0.08 0.08 0.13 0.08 0.11 0. 320 pF 225 9 1.5 nC 3.3 nC NDS9956A.SAM ...
Page 3
... C/W when mounted on a 0.003 in pad of 2oz cpper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions 1.25 A (Note 1. /dt = 100 A/µ Min Typ Max Units 1.2 0.8 1.3 100 is guaranteed NDS9956A.SAM ...
Page 4
... DRAIN CURRENT (A) D Voltage and Drain Current 125°C J 25° DRAIN CURRENT (A) D Current and Temperature 250µ JUNCTION TEMPERATURE (°C) J Temperature. 6.0 8 -55° NDS9956A.SAM ...
Page 5
... Figure 10. Gate Charge Characteristics -55°C J 25°C 125° 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD with Current and Temperature . V = 10V DS 20V GATE CHARGE (nC) g 1.4 15V 12 NDS9956A.SAM ...
Page 6
... Still Air 0.1 0.2 0.3 0.4 2 2oz COPPER MOUNTING PAD AREA (in ) Current versus Copper Mounting Pad Area. R ( See Note 1c JA P(pk ( Duty Cycle 0.5 NDS9956A.SAM ...