BAS116H NXP Semiconductors, BAS116H Datasheet - Page 4

• Manufacturer Part Number: BAS116H
• Description: Low leakage switching diode, encapsulated in a SOD123F small and flat leadSurface-Mounted Device (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BAS116H
Product data sheet
Fig 1.
Fig 3.
(mA)
(nA)
(1) T
(2) T
(3) T
10
10
10
(1) Maximum values
(2) Typical values
I
I
R
F
300
200
100
10
10
−1
−2
−3
1
0
2
Forward current as a function of forward
voltage
V
Reverse current as a function of junction
temperature
0
0
amb
amb
amb
R
= 75 V
= 150 C; typical values
= 25 C; typical values
= 25 C; maximum values
(1)
(2)
0.4
50
100
0.8
(1)
(2)
150
1.2
All information provided in this document is subject to legal disclaimers.
T
V
(3)
j
F
(°C)
mlb752
(V)
mlb754
200
1.6
Rev. 3 — 31 May 2011
Fig 2.
Fig 4.
I
FSM
(A)
(pF)
10
C
10
d
10
−1
1
2
1
0
2
1
Based on square wave currents
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
0
T
Diode capacitance as a function of reverse
voltage; typical values
j
amb
= 25 C; prior to surge
= 25 C; f = 1 MHz
10
5
Low leakage switching diode
10
10
2
BAS116H
10
15
3
© NXP B.V. 2011. All rights reserved.
V
t
p
R
(μs)
mbg526
mbg704
(V)
10
20
4
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