BAS29_31_35 NXP Semiconductors, BAS29_31_35 Datasheet - Page 5

• Manufacturer Part Number: BAS29_31_35
• Description: General purpose switching diodes fabricated in planartechnology, and encapsulated in small rectangular plasticSMD SOT23 packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
GRAPHICAL DATA
2003 Mar 20
handbook, halfpage
handbook, full pagewidth
General purpose controlled avalanche
(double) diodes
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
Based on square wave currents.
T
j
I FSM
(mA)
= 25 °C prior to surge.
(A)
I F
10
300
200
100
10
10
−1
0
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
(1)
(2)
100
10
T amb (
o
C)
MBG440
200
10
5
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
IF
600
400
200
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage.
BAS29; BAS31; BAS35
(1)
10
3
(2)
1
(3)
t p (µs)
V F (V)
Product data sheet
MBH280
MBH327
10
2
4