BAS29_31_35 NXP Semiconductors, BAS29_31_35 Datasheet - Page 6

• Manufacturer Part Number: BAS29_31_35
• Description: General purpose switching diodes fabricated in planartechnology, and encapsulated in small rectangular plasticSMD SOT23 packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2003 Mar 20
handbook, full pagewidth
handbook, halfpage
General purpose controlled avalanche
(double) diodes
(1) V
(2) V
Fig.5
(1) I
(µA)
10
10
V = V
10
I R
R
10
−1
−2
R
R
R = 50
2
1
= 3 mA.
S
= 90 V; maximum values.
= 90 V; typical values.
0
R
Reverse current as a function of junction
temperature.
I x R
F
Ω
S
(1)
100
(2)
I F
Fig.7 Reverse recovery voltage test circuit and waveforms.
D.U.T.
T j (
o
C)
OSCILLOSCOPE
SAMPLING
MBH282
R = 50
MGA881
i
200
Ω
V R
6
handbook, halfpage
10%
t r
f = 1 MHz; T
Fig.6
90%
(pF)
C d
input signal
40
30
20
10
0
0
t p
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
BAS29; BAS31; BAS35
10
t
I F
20
output signal
Product data sheet
V R (V)
t rr
MGD003
30
(1)
t