BUK762R0-40C NXP Semiconductors, BUK762R0-40C Datasheet - Page 2

• Manufacturer Part Number: BUK762R0-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK762R0-40C_2
Product data sheet
Pin
1
2
3
mb
Type number
BUK762R0-40C
Symbol Parameter
V
V
V
I
I
P
T
T
Avalanche ruggedness
E
E
D
DM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
It is not possible to make a connection to pin 2.
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
non-repetitive
drain-source avalanche
energy
repetitive drain-source
avalanche energy
Pinning
Symbol
G
D
S
D
Ordering information
Limiting values
Package
Name
D2PAK
Description
gate
drain
source
mounting base;
connected to drain
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead
cropped)
Conditions
T
R
T
T
T
T
see
T
I
V
unclamped inductive load
see
D
j
mb
mb
mb
mb
mb
GS
GS
≥ 25 °C; T
= 100 A; V
Figure 4
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; V
= 25 °C; t
= 25 °C; see
= 10 V; T
= 20 kΩ
Rev. 02 — 20 August 2007
j
sup
≤ 175 °C
j(init)
p
GS
GS
≤ 10 μs; duty type pulsed;
GS
≤ 40 V; R
Figure 2
= 10 V; see
= 10 V; see
= 25 °C; inductive load type
= 10 V; see
[1]
Simplified outline
GS
= 50 Ω;
SOT404 (D2PAK)
Figure 1
Figure 1
Figure 1
1
N-channel TrenchMOS standard level FET
mb
2
and
and
3
4
4
[2][3]
[2][3]
[4][5]
[6][7]
[1]
BUK762R0-40C
-20
-55
Min
-
-
-
-
-
-
-
-55
-
-
Graphic Symbol
Max
40
40
20
276
100
100
1104
333
175
175
1.2
-
mbb076
G
© NXP B.V. 2007. All rights reserved.
D
S
Version
SOT404
Unit
V
V
V
A
A
A
A
W
°C
°C
J
J
2 of 15