BUK762R0-40C NXP Semiconductors, BUK762R0-40C Datasheet - Page 7

• Manufacturer Part Number: BUK762R0-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK762R0-40C_2
Product data sheet
Symbol
t
L
L
f
Fig 6. Forward transconductance as a function of
D
S
180
(S)
120
g
fs
60
0
T
drain current; typical values
0
j
= 25 °C; V
Characteristics
Parameter
fall time
internal drain
inductance
internal source
inductance
20
DS
= 25 V
…continued
40
Conditions
V
V
T
from upper edge of drain
mounting base to centre of die;
T
from source lead 6 mm from
package to source bond pad;
T
j
j
j
DS
GS
60
= 25 °C
= 25 °C
= 25 °C
= 30 V; R
= 10 V; R
003aab008
I
D
(A)
Rev. 02 — 20 August 2007
80
L
G(ext)
= 1.2 Ω;
= 10 Ω;
Fig 7. Transfer characteristics: drain current as a
400
(A)
300
200
100
I
D
V
0
function of gate-source voltage; typical values
DS
0
N-channel TrenchMOS standard level FET
= 25 V
Min
-
-
-
1
T
j
= 175 ° C
BUK762R0-40C
3
Typ
119
2.5
7.5
4
T
j
= 25 ° C
Max
-
-
-
© NXP B.V. 2007. All rights reserved.
6
003aab010
V
GS
(V)
7
Unit
ns
nH
nH
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