BUK762R0-40C NXP Semiconductors, BUK762R0-40C Datasheet - Page 9

• Manufacturer Part Number: BUK762R0-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK762R0-40C_2
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate-source voltage as a function of gate
R
(mΩ)
DSon
V
(V)
3.5
2.5
1.5
GS
10
3
2
1
8
6
4
2
0
T
T
of gate-source voltage; typical values
charge; typical values
0
5
j
j
= 25 °C; I
= 25 °C; I
50
D
D
V
= 25 A
= 25 A
DD
10
= 14 V
100
15
150
V
V
DD
GS
Q
003aab011
003aab082
= 32 V
G
(V)
(nC)
200
Rev. 02 — 20 August 2007
20
Fig 13. Normalized drain-source on-state resistance
Fig 15. Input, output and reverse transfer capacitances
14000
10500
(pF)
7000
3500
C
a
1.5
0.5
2
1
0
0
10
V
a =
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
-60
GS
−2
N-channel TrenchMOS standard level FET
R
= 0 V; f = 1 M H z
DSon ( 25°C )
R
C
C
C
DSon
oss
iss
rss
10
0
−1
BUK762R0-40C
60
1
120
10
© NXP B.V. 2007. All rights reserved.
V
03aa27
003aab009
T
DS
j
( ° C)
(V)
180
10
2
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