BUK762R0-40C NXP Semiconductors, BUK762R0-40C Datasheet - Page 6

• Manufacturer Part Number: BUK762R0-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK762R0-40C_2
Product data sheet
Symbol
I
R
Source-drain diode
V
t
Q
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
GSS
rr
d(on)
r
d(off)
SD
DSon
iss
oss
rss
r
G(tot)
GS
GD
Characteristics
Parameter
gate leakage current
drain-source on-state
resistance
source-drain voltage
reverse recovery time I
recovered charge
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
…continued
Conditions
V
V
T
V
T
13
V
see
I
see
V
T
I
V
T
I
V
see
I
V
see
I
V
see
V
f = 1 MHz; T
see
V
f = 1 MHz; T
see
V
f = 1 MHz; T
see
V
V
T
V
V
T
V
V
T
S
S
S
D
D
D
j
j
j
j
j
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DS
GS
DS
GS
= 25 °C
= 175 °C; see
= 25 A; V
= 20 A; dI
= 25 °C
= 20 A; dI
= 25 °C
= 25 A; V
= 25 A; V
= 25 A; V
= 25 °C
= 25 °C
= 25 °C
Figure 13
Figure 16
Figure 14
Figure 14
Figure 14
Figure 15
Figure 15
Figure 15
= 0 V; V
= 0 V; V
= 30 V; R
= 30 V; R
= 30 V; R
= 10 V; I
= 10 V; I
= -10 V; V
= -10 V; V
= 10 V; T
= 10 V; T
= 10 V; T
= 0 V; V
= 0 V; V
= 0 V; V
= 10 V; R
= 10 V; R
= 10 V; R
Rev. 02 — 20 August 2007
GS
DS
DS
DS
S
S
j
j
j
GS
GS
DS
DS
DS
D
D
/dt = -100 A/μs;
/dt = -100 A/μs;
= 25 °C;
= 25 °C;
= 25 °C;
j
j
j
L
L
L
G(ext)
G(ext)
G(ext)
and
= 25 A; T
DS
DS
= 25 A;
= 0 V; T
= 32 V;
= 25 °C;
= 32 V;
= 25 °C;
= 32 V;
= 25 °C;
= 1.2 Ω;
= 1.2 Ω;
= 1.2 Ω;
= 20 V; T
= -20 V;
= 25 V;
= 25 V;
= 25 V;
Figure 12
= 30 V;
= 30 V;
12
= 10 Ω;
= 10 Ω;
= 10 Ω;
j
j
= 25 °C;
j
= 25 °C;
= 25 °C
and
N-channel TrenchMOS standard level FET
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK762R0-40C
Typ
2
2
-
1.7
0.85
75
57
175
38
67
8492
1606
1101
65
133
146
Max
100
100
3.75
2
1.2
-
-
-
-
-
11323
1927
1508
-
-
-
© NXP B.V. 2007. All rights reserved.
Unit
nA
nA
mΩ
mΩ
V
ns
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
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