BUK762R0-40C NXP Semiconductors, BUK762R0-40C Datasheet - Page 4

• Manufacturer Part Number: BUK762R0-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK762R0-40C_2
Product data sheet
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
10
I
10
D
10
10
10
−1
1
4
3
2
10
T
(1) Single pulse; T
(2) Single pulse; T
(3) Repetitive.
(1) Capped at 100 A due to package.
−1
mb
= 25 °C; I
DM
is single pulse
mb
mb
= 25 °C.
= 150 °C.
limit R
I
(A)
10
10
DSon
AL
10
3
2
1
10
-3
= V
(1)
1
DS
/I
D
Rev. 02 — 20 August 2007
10
-2
10
-1
DC
1
(1)
(2)
(3)
t
003aab013
AL
N-channel TrenchMOS standard level FET
(ms)
10
10
BUK762R0-40C
V
DS
(V)
δ = 10 μs
100 μs
1 ms
10 ms
100 ms
© NXP B.V. 2007. All rights reserved.
003aab028
10
2
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