BUK762R0-40C NXP Semiconductors, BUK762R0-40C Datasheet - Page 3

• Manufacturer Part Number: BUK762R0-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
[7]
BUK762R0-40C_2
Product data sheet
Symbol Parameter
Source-drain diode
I
I
S
SM
Fig 1. Continuous drain current as a function of
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
Refer to document 9397 750 12572 for further information.
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
(A)
300
200
100
I
D
0
mounting base temperature
V
(1) Capped at 100 A due to package.
source current
peak source current
0
GS
Limiting values
10 V
(1)
50
…continued
100
Conditions
T
T
t
p
mb
mb
150
≤ 10 μs; duty type pulsed; T
= 25 °C
= 25 °C
T
003aab004
mb
(°C)
200
Rev. 02 — 20 August 2007
Fig 2. Normalized total power dissipation as a
mb
P
(%)
120
der
80
40
= 25 °C
0
P
function of mounting base temperature
0
der
N-channel TrenchMOS standard level FET
=
P
tot ( 25°C )
P
50
tot
[2][3]
× 100 %
[1]
BUK762R0-40C
Min
-
-
-
100
150
Max
276
100
1104
© NXP B.V. 2007. All rights reserved.
T
03aa16
mb
( ° C)
200
Unit
A
A
A
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