PMV213SN NXP Semiconductors, PMV213SN Datasheet - Page 2

• Manufacturer Part Number: PMV213SN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 11128
Product data
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
DS
DGR
GS
tot
stg
j
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
Limiting values
Conditions
25 C
25 C
T
T
T
T
Rev. 02 — 19 February 2003
sp
sp
sp
sp
sp
sp
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
T
T
j
j
150 C
150 C; R
Figure 1
GS
GS
= 10 V;
= 10 V;
p
p
GS
10 s;
10 s
Figure 2
= 20 k
Figure 2
Figure 3
and
TrenchMOS™ standard level FET
3
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
PMV213SN
Min
-
-
-
-
-
-
-
-
-
55
55
Max
100
100
1.9
1.2
7.6
2
+150
+150
1.7
6.9
30
2 of 12
Unit
V
V
V
A
A
A
W
A
A
C
C